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Article: Self-Aligned and Scalable Growth of Monolayer WSe2 –MoS2 Lateral Heterojunctions
Title | Self-Aligned and Scalable Growth of Monolayer WSe<inf>2</inf>–MoS<inf>2</inf> Lateral Heterojunctions |
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Authors | |
Keywords | band alignments transition metal dichalcogenides lateral heterojunctions self-aligned and scalable growth light-emitting devices |
Issue Date | 2018 |
Citation | Advanced Functional Materials, 2018, v. 28, n. 17, article no. 1706860 How to Cite? |
Abstract | 2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe –MoS monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe –MoS lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications. 2 2 2 2 |
Persistent Identifier | http://hdl.handle.net/10722/298254 |
ISSN | 2023 Impact Factor: 18.5 2023 SCImago Journal Rankings: 5.496 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Li, Ming Yang | - |
dc.contributor.author | Pu, Jiang | - |
dc.contributor.author | Huang, Jing Kai | - |
dc.contributor.author | Miyauchi, Yuhei | - |
dc.contributor.author | Matsuda, Kazunari | - |
dc.contributor.author | Takenobu, Taishi | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:08:01Z | - |
dc.date.available | 2021-04-08T03:08:01Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Advanced Functional Materials, 2018, v. 28, n. 17, article no. 1706860 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10722/298254 | - |
dc.description.abstract | 2D layered heterostructures have attracted intensive interests due to their unique optical, transport, and interfacial properties. The laterally stitched heterojunction based on dissimilar 2D transition metal dichalcogenides forms an intrinsic p–n junction without the necessity of applying an external voltage. However, no scalable processes are reported to construct the devices with such lateral heterostructures. Here, a scalable strategy, two-step and location-selective chemical vapor deposition, is reported to synthesize self-aligned WSe –MoS monolayer lateral heterojunction arrays and demonstrates their light-emitting devices. The proposed fabrication process enables the growth of high-quality interfaces and the first successful observation of electroluminescence at the WSe –MoS lateral heterojunction. The electroluminescence study has confirmed the type-I alignment at the interface rather than commonly believed type-II alignment. This self-aligned growth process paves the way for constructing various 2D lateral heterostructures in a scalable manner, practically important for integrated 2D circuit applications. 2 2 2 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Advanced Functional Materials | - |
dc.subject | band alignments | - |
dc.subject | transition metal dichalcogenides | - |
dc.subject | lateral heterojunctions | - |
dc.subject | self-aligned and scalable growth | - |
dc.subject | light-emitting devices | - |
dc.title | Self-Aligned and Scalable Growth of Monolayer WSe<inf>2</inf>–MoS<inf>2</inf> Lateral Heterojunctions | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1002/adfm.201706860 | - |
dc.identifier.scopus | eid_2-s2.0-85042524677 | - |
dc.identifier.volume | 28 | - |
dc.identifier.issue | 17 | - |
dc.identifier.spage | article no. 1706860 | - |
dc.identifier.epage | article no. 1706860 | - |
dc.identifier.eissn | 1616-3028 | - |
dc.identifier.isi | WOS:000430658300011 | - |
dc.identifier.issnl | 1616-301X | - |