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- Publisher Website: 10.1109/ICSICT.2016.7998959
- Scopus: eid_2-s2.0-85028680558
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Conference Paper: Monolayer MoS2 for nonvolatile memory applications
Title | Monolayer MoS<inf>2</inf> for nonvolatile memory applications |
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Authors | |
Issue Date | 2017 |
Citation | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2017, p. 489-491 How to Cite? |
Abstract | In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs. |
Persistent Identifier | http://hdl.handle.net/10722/298226 |
DC Field | Value | Language |
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dc.contributor.author | Chang, Kai Ping | - |
dc.contributor.author | Wang, Jer Chyi | - |
dc.contributor.author | Chen, Chang Hsiao | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Lai, Chao Sung | - |
dc.date.accessioned | 2021-04-08T03:07:56Z | - |
dc.date.available | 2021-04-08T03:07:56Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 2017, p. 489-491 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298226 | - |
dc.description.abstract | In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated. The MoS2-NVMs with 9-nm-thck blocking oxide layer exhibits a large hysteresis in the C-V sweeping and the fastest speed in programming characteristics. In addition, both electrons and holes can store in MoS2 monolayer, contributing to a promising application in future high-performance NVMs. | - |
dc.language | eng | - |
dc.relation.ispartof | 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings | - |
dc.title | Monolayer MoS<inf>2</inf> for nonvolatile memory applications | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/ICSICT.2016.7998959 | - |
dc.identifier.scopus | eid_2-s2.0-85028680558 | - |
dc.identifier.spage | 489 | - |
dc.identifier.epage | 491 | - |