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- Publisher Website: 10.1109/IEDM.2015.7409813
- Scopus: eid_2-s2.0-84964076479
- WOS: WOS:000380472500207
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Conference Paper: TMD FinFET with 4 nm thin body and back gate control for future low power technology
Title | TMD FinFET with 4 nm thin body and back gate control for future low power technology |
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Authors | |
Issue Date | 2015 |
Citation | 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 7-9 December 2015. InInternational Electron Devices Meeting (IEDM), 2015 How to Cite? |
Abstract | A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET. |
Persistent Identifier | http://hdl.handle.net/10722/298149 |
ISSN | 2023 SCImago Journal Rankings: 1.047 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, Min Cheng | - |
dc.contributor.author | Li, Kai Shin | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Lu, Ang Yu | - |
dc.contributor.author | Li, Ming Yang | - |
dc.contributor.author | Chang, Yung Huang | - |
dc.contributor.author | Lin, Chang Hsien | - |
dc.contributor.author | Chen, Yi Ju | - |
dc.contributor.author | Hou, Yun Fang | - |
dc.contributor.author | Chen, Chun Chi | - |
dc.contributor.author | Wu, Bo Wei | - |
dc.contributor.author | Wu, Cheng San | - |
dc.contributor.author | Yang, Ivy | - |
dc.contributor.author | Lee, Yao Jen | - |
dc.contributor.author | Shieh, Jia Min | - |
dc.contributor.author | Yeh, Wen Kuan | - |
dc.contributor.author | Shih, Jyun Hong | - |
dc.contributor.author | Su, Po Cheng | - |
dc.contributor.author | Sachid, Angada B. | - |
dc.contributor.author | Wang, Tahui | - |
dc.contributor.author | Yang, Fu Liang | - |
dc.contributor.author | Hu, Chenming | - |
dc.date.accessioned | 2021-04-08T03:07:47Z | - |
dc.date.available | 2021-04-08T03:07:47Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, 7-9 December 2015. InInternational Electron Devices Meeting (IEDM), 2015 | - |
dc.identifier.issn | 0163-1918 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298149 | - |
dc.description.abstract | A 4 nm thin transition-metal dichalcogenide (TMD) body FinFET with back gate control is proposed and demonstrated for the first time. The TMD FinFET channel is deposited by CVD. Hydrogen plasma treatment of TMD is employed to lower the series resistance for the first time. The 2 nm thin back gate oxide enables 0.5 V of Vth shift with 1.2 V change in back bias for correcting device variations and dynamically configuring a device as a high performance or low leakage device. TMD can potentially provide sub-nm thin monolayer body needed for 2 nm node FinFET. | - |
dc.language | eng | - |
dc.relation.ispartof | International Electron Devices Meeting (IEDM) | - |
dc.title | TMD FinFET with 4 nm thin body and back gate control for future low power technology | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/IEDM.2015.7409813 | - |
dc.identifier.scopus | eid_2-s2.0-84964076479 | - |
dc.identifier.isi | WOS:000380472500207 | - |
dc.identifier.issnl | 0163-1918 | - |