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- Publisher Website: 10.7567/JJAP.54.06FF06
- Scopus: eid_2-s2.0-84930701837
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Conference Paper: Large-area WSe2 electric double layer transistors on a plastic substrate
Title | Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate |
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Authors | |
Issue Date | 2015 |
Citation | Japanese Journal of Applied Physics, 2015, v. 54, n. 6, suppl. 1, article no. 06FF06 How to Cite? |
Abstract | Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10 , demonstrating chemically grown WSe transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. 2 2 2 4 |
Persistent Identifier | http://hdl.handle.net/10722/298119 |
ISSN | 2023 Impact Factor: 1.5 2023 SCImago Journal Rankings: 0.307 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Funahashi, Kazuma | - |
dc.contributor.author | Pu, Jiang | - |
dc.contributor.author | Li, Ming Yang | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Iwasa, Yoshihiro | - |
dc.contributor.author | Takenobu, Taishi | - |
dc.date.accessioned | 2021-04-08T03:07:43Z | - |
dc.date.available | 2021-04-08T03:07:43Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | Japanese Journal of Applied Physics, 2015, v. 54, n. 6, suppl. 1, article no. 06FF06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298119 | - |
dc.description.abstract | Due to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10 , demonstrating chemically grown WSe transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. 2 2 2 4 | - |
dc.language | eng | - |
dc.relation.ispartof | Japanese Journal of Applied Physics | - |
dc.title | Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.7567/JJAP.54.06FF06 | - |
dc.identifier.scopus | eid_2-s2.0-84930701837 | - |
dc.identifier.volume | 54 | - |
dc.identifier.issue | 6, suppl. 1 | - |
dc.identifier.spage | article no. 06FF06 | - |
dc.identifier.epage | article no. 06FF06 | - |
dc.identifier.eissn | 1347-4065 | - |
dc.identifier.isi | WOS:000358264900015 | - |
dc.identifier.issnl | 0021-4922 | - |