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Conference Paper: Large-area WSe2 electric double layer transistors on a plastic substrate

TitleLarge-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate
Authors
Issue Date2015
Citation
Japanese Journal of Applied Physics, 2015, v. 54, n. 6, suppl. 1, article no. 06FF06 How to Cite?
AbstractDue to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10 , demonstrating chemically grown WSe transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. 2 2 2 4
Persistent Identifierhttp://hdl.handle.net/10722/298119
ISSN
2021 Impact Factor: 1.491
2020 SCImago Journal Rankings: 0.487
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFunahashi, Kazuma-
dc.contributor.authorPu, Jiang-
dc.contributor.authorLi, Ming Yang-
dc.contributor.authorLi, Lain Jong-
dc.contributor.authorIwasa, Yoshihiro-
dc.contributor.authorTakenobu, Taishi-
dc.date.accessioned2021-04-08T03:07:43Z-
dc.date.available2021-04-08T03:07:43Z-
dc.date.issued2015-
dc.identifier.citationJapanese Journal of Applied Physics, 2015, v. 54, n. 6, suppl. 1, article no. 06FF06-
dc.identifier.issn0021-4922-
dc.identifier.urihttp://hdl.handle.net/10722/298119-
dc.description.abstractDue to the requirements for large-area, uniform films, currently transition metal dichalcogenides (TMDC) cannot be used in flexible transistor industrial applications. In this study, we first transferred chemically grown large-area WSe monolayer films from the as-grown sapphire substrates to the flexible plastic substrates. We also fabricated electric double layer transistors using the WSe films on the plastic substrates. These transistors exhibited ambipolar operation and an ON/OFF current ratio of ∼10 , demonstrating chemically grown WSe transistors on plastic substrates for the first time. This achievement can be an important first step for the next-generation TMDC based flexible devices. 2 2 2 4-
dc.languageeng-
dc.relation.ispartofJapanese Journal of Applied Physics-
dc.titleLarge-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.7567/JJAP.54.06FF06-
dc.identifier.scopuseid_2-s2.0-84930701837-
dc.identifier.volume54-
dc.identifier.issue6, suppl. 1-
dc.identifier.spagearticle no. 06FF06-
dc.identifier.epagearticle no. 06FF06-
dc.identifier.eissn1347-4065-
dc.identifier.isiWOS:000358264900015-
dc.identifier.issnl0021-4922-

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