File Download
There are no files associated with this item.
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1557/mrs.2014.138
- Scopus: eid_2-s2.0-84921812138
- WOS: WOS:000341107900013
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Two-dimensional materials for electronic applications
Title | Two-dimensional materials for electronic applications |
---|---|
Authors | |
Keywords | layered electrical properties graphene electronic material microelectronics |
Issue Date | 2014 |
Citation | MRS Bulletin, 2014, v. 39, n. 8, p. 711-718 How to Cite? |
Abstract | This article reviews the potential of graphene and related two-dimensional (2D) materials for applications in micro- and nanoelectronics. In addition to graphene, special emphasis is placed on transition metal dichalcogenides (TMDs). First, we discuss potential solutions for application-scale material growth, in particular chemical vapor deposition. We describe challenges for electrical contacts and dielectric interfaces with 2D materials. The device-related sections in this review first weigh the pros and cons of semi-metal graphene as a field-effect transistor (FET) channel material for logic and radio frequency applications. This is followed by an introduction to alternate graphene switch concepts that utilize the particular properties of the material, namely tunnel FETs, vertical devices, and bilayer pseudospin FETs. The final section is dedicated to semiconducting TMDs and their integration in FETs using the examples of n-type molybdenum disulfide (MoS2) and p-type tungsten diselenide (WSe2). |
Persistent Identifier | http://hdl.handle.net/10722/298107 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.102 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lemme, Max C. | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Palacios, Tomás | - |
dc.contributor.author | Schwierz, Frank | - |
dc.date.accessioned | 2021-04-08T03:07:41Z | - |
dc.date.available | 2021-04-08T03:07:41Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | MRS Bulletin, 2014, v. 39, n. 8, p. 711-718 | - |
dc.identifier.issn | 0883-7694 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298107 | - |
dc.description.abstract | This article reviews the potential of graphene and related two-dimensional (2D) materials for applications in micro- and nanoelectronics. In addition to graphene, special emphasis is placed on transition metal dichalcogenides (TMDs). First, we discuss potential solutions for application-scale material growth, in particular chemical vapor deposition. We describe challenges for electrical contacts and dielectric interfaces with 2D materials. The device-related sections in this review first weigh the pros and cons of semi-metal graphene as a field-effect transistor (FET) channel material for logic and radio frequency applications. This is followed by an introduction to alternate graphene switch concepts that utilize the particular properties of the material, namely tunnel FETs, vertical devices, and bilayer pseudospin FETs. The final section is dedicated to semiconducting TMDs and their integration in FETs using the examples of n-type molybdenum disulfide (MoS2) and p-type tungsten diselenide (WSe2). | - |
dc.language | eng | - |
dc.relation.ispartof | MRS Bulletin | - |
dc.subject | layered | - |
dc.subject | electrical properties | - |
dc.subject | graphene | - |
dc.subject | electronic material | - |
dc.subject | microelectronics | - |
dc.title | Two-dimensional materials for electronic applications | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1557/mrs.2014.138 | - |
dc.identifier.scopus | eid_2-s2.0-84921812138 | - |
dc.identifier.volume | 39 | - |
dc.identifier.issue | 8 | - |
dc.identifier.spage | 711 | - |
dc.identifier.epage | 718 | - |
dc.identifier.isi | WOS:000341107900013 | - |
dc.identifier.issnl | 0883-7694 | - |