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- Publisher Website: 10.1021/nn504229z
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Article: Spectroscopic signatures for interlayer coupling in MoS2 -WSe2 van der waals stacking
Title | Spectroscopic signatures for interlayer coupling in MoS<inf>2</inf>-WSe<inf>2</inf> van der waals stacking |
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Authors | |
Keywords | van der Wall stacking heterojunction molybdenum disulfide transition metal dichalcogenides tungsten diselenides interlayer coupling |
Issue Date | 2014 |
Citation | ACS Nano, 2014, v. 8, n. 9, p. 9649-9656 How to Cite? |
Abstract | Stacking of MoS and WSe monolayers is conducted by transferring triangular MoS monolayers on top of WSe monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A for WSe (309 cm ) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E′ for MoS at 286 cm and A for MoS at around 463 cm confirm the enhancement of the interlayer coupling. 2 2 2 2 1g 2 2 1g 2 2 -1 -1 2 -1 |
Persistent Identifier | http://hdl.handle.net/10722/298106 |
ISSN | 2023 Impact Factor: 15.8 2023 SCImago Journal Rankings: 4.593 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chiu, Ming Hui | - |
dc.contributor.author | Li, Ming Yang | - |
dc.contributor.author | Zhang, Wengjing | - |
dc.contributor.author | Hsu, Wei Ting | - |
dc.contributor.author | Chang, Wen Hao | - |
dc.contributor.author | Terrones, Mauricio | - |
dc.contributor.author | Terrones, Humberto | - |
dc.contributor.author | Li, Lain Jong | - |
dc.date.accessioned | 2021-04-08T03:07:41Z | - |
dc.date.available | 2021-04-08T03:07:41Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | ACS Nano, 2014, v. 8, n. 9, p. 9649-9656 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298106 | - |
dc.description.abstract | Stacking of MoS and WSe monolayers is conducted by transferring triangular MoS monolayers on top of WSe monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 °C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A for WSe (309 cm ) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E′ for MoS at 286 cm and A for MoS at around 463 cm confirm the enhancement of the interlayer coupling. 2 2 2 2 1g 2 2 1g 2 2 -1 -1 2 -1 | - |
dc.language | eng | - |
dc.relation.ispartof | ACS Nano | - |
dc.subject | van der Wall stacking | - |
dc.subject | heterojunction | - |
dc.subject | molybdenum disulfide | - |
dc.subject | transition metal dichalcogenides | - |
dc.subject | tungsten diselenides | - |
dc.subject | interlayer coupling | - |
dc.title | Spectroscopic signatures for interlayer coupling in MoS<inf>2</inf>-WSe<inf>2</inf> van der waals stacking | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1021/nn504229z | - |
dc.identifier.scopus | eid_2-s2.0-84921481158 | - |
dc.identifier.volume | 8 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | 9649 | - |
dc.identifier.epage | 9656 | - |
dc.identifier.eissn | 1936-086X | - |
dc.identifier.isi | WOS:000342184400099 | - |
dc.identifier.issnl | 1936-0851 | - |