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- Publisher Website: 10.1038/srep05951
- Scopus: eid_2-s2.0-84905909649
- PMID: 25109609
- WOS: WOS:000340605100001
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Article: Novel field-effect schottky barrier transistors based on graphene-MoS2 heterojunctions
Title | Novel field-effect schottky barrier transistors based on graphene-MoS2 heterojunctions |
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Authors | |
Issue Date | 2014 |
Citation | Scientific Reports, 2014, v. 4, article no. 5951 How to Cite? |
Abstract | Recently, two-dimensional materials such as molybdenum disulphide (MoS ) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS FET is rather low (typically 0.5-20 cm /V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10 ) is achieved by adjusting the backgate (through 300 nm SiO ) voltage to modulate the graphene-MoS Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm /V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. 2 2 2 2 2 2 2 5 2 |
Persistent Identifier | http://hdl.handle.net/10722/298090 |
PubMed Central ID | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Tian, He | - |
dc.contributor.author | Tan, Zhen | - |
dc.contributor.author | Wu, Can | - |
dc.contributor.author | Wang, Xiaomu | - |
dc.contributor.author | Mohammad, Mohammad Ali | - |
dc.contributor.author | Xie, Dan | - |
dc.contributor.author | Yang, Yi | - |
dc.contributor.author | Wang, Jing | - |
dc.contributor.author | Li, Lain Jong | - |
dc.contributor.author | Xu, Jun | - |
dc.contributor.author | Ren, Tian Ling | - |
dc.date.accessioned | 2021-04-08T03:07:39Z | - |
dc.date.available | 2021-04-08T03:07:39Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | Scientific Reports, 2014, v. 4, article no. 5951 | - |
dc.identifier.uri | http://hdl.handle.net/10722/298090 | - |
dc.description.abstract | Recently, two-dimensional materials such as molybdenum disulphide (MoS ) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS FET is rather low (typically 0.5-20 cm /V.s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS heterojunction (GMH), where the characteristics of high mobility from graphene and high on-off ratio from MoS are properly balanced in the novel transistors. Large modulation on the device current (on/off ratio of 10 ) is achieved by adjusting the backgate (through 300 nm SiO ) voltage to modulate the graphene-MoS Schottky barrier. Moreover, the field effective mobility of the FESBT is up to 58.7 cm /V.s. Our theoretical analysis shows that if the thickness of oxide is further reduced, a subthreshold swing (SS) of 40 mV/decade can be maintained within three orders of drain current at room temperature. This provides an opportunity to overcome the limitation of 60 mV/decade for conventional CMOS devices. The FESBT implemented with a high on-off ratio, a relatively high mobility and a low subthreshold promises low-voltage and low-power applications for future electronics. 2 2 2 2 2 2 2 5 2 | - |
dc.language | eng | - |
dc.relation.ispartof | Scientific Reports | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | Novel field-effect schottky barrier transistors based on graphene-MoS2 heterojunctions | - |
dc.type | Article | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1038/srep05951 | - |
dc.identifier.pmid | 25109609 | - |
dc.identifier.pmcid | PMC4127518 | - |
dc.identifier.scopus | eid_2-s2.0-84905909649 | - |
dc.identifier.volume | 4 | - |
dc.identifier.spage | article no. 5951 | - |
dc.identifier.epage | article no. 5951 | - |
dc.identifier.eissn | 2045-2322 | - |
dc.identifier.isi | WOS:000340605100001 | - |
dc.identifier.issnl | 2045-2322 | - |