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Article: Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors
Title | Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors |
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Authors | |
Keywords | Graded bandgaps Homojunctions Phototransistors Self-powered Transition metal dichalcogenides |
Issue Date | 2020 |
Publisher | SpringerOpen. The Journal's web site is located at https://www.springer.com/journal/40820 |
Citation | Nano-Micro Letters, 2020, v. 12, p. article no. 26 How to Cite? |
Abstract | Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.[Figure not available: see fulltext.]. © 2020, © 2020, The Author(s). |
Persistent Identifier | http://hdl.handle.net/10722/290125 |
ISSN | 2023 Impact Factor: 31.6 2023 SCImago Journal Rankings: 6.484 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Xu, H | - |
dc.contributor.author | Zhu, JT | - |
dc.contributor.author | Zou, G | - |
dc.contributor.author | Liu, W | - |
dc.contributor.author | Li, X | - |
dc.contributor.author | Li, C | - |
dc.contributor.author | Ryu, GH | - |
dc.contributor.author | Xu, W | - |
dc.contributor.author | Han, X | - |
dc.contributor.author | Guo, Z | - |
dc.contributor.author | Warner, JH | - |
dc.contributor.author | Wu, J | - |
dc.contributor.author | Liu, H | - |
dc.date.accessioned | 2020-10-22T08:22:27Z | - |
dc.date.available | 2020-10-22T08:22:27Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Nano-Micro Letters, 2020, v. 12, p. article no. 26 | - |
dc.identifier.issn | 2311-6706 | - |
dc.identifier.uri | http://hdl.handle.net/10722/290125 | - |
dc.description.abstract | Ternary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.[Figure not available: see fulltext.]. © 2020, © 2020, The Author(s). | - |
dc.language | eng | - |
dc.publisher | SpringerOpen. The Journal's web site is located at https://www.springer.com/journal/40820 | - |
dc.relation.ispartof | Nano-Micro Letters | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.subject | Graded bandgaps | - |
dc.subject | Homojunctions | - |
dc.subject | Phototransistors | - |
dc.subject | Self-powered | - |
dc.subject | Transition metal dichalcogenides | - |
dc.title | Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors | - |
dc.type | Article | - |
dc.identifier.email | Guo, Z: zxguo@hku.hk | - |
dc.identifier.authority | Guo, Z=rp02451 | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1007/s40820-019-0361-2 | - |
dc.identifier.scopus | eid_2-s2.0-85078259187 | - |
dc.identifier.hkuros | 317056 | - |
dc.identifier.volume | 12 | - |
dc.identifier.spage | article no. 26 | - |
dc.identifier.epage | article no. 26 | - |
dc.identifier.isi | WOS:000510847700012 | - |
dc.publisher.place | Germany | - |
dc.identifier.issnl | 2150-5551 | - |