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Article: Spatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors

TitleSpatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors
Authors
KeywordsGraded bandgaps
Homojunctions
Phototransistors
Self-powered
Transition metal dichalcogenides
Issue Date2020
PublisherSpringerOpen. The Journal's web site is located at https://www.springer.com/journal/40820
Citation
Nano-Micro Letters, 2020, v. 12, p. article no. 26 How to Cite?
AbstractTernary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.[Figure not available: see fulltext.]. © 2020, © 2020, The Author(s).
Persistent Identifierhttp://hdl.handle.net/10722/290125
ISSN
2019 Impact Factor: 12.264
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorXu, H-
dc.contributor.authorZhu, JT-
dc.contributor.authorZou, G-
dc.contributor.authorLiu, W-
dc.contributor.authorLi, X-
dc.contributor.authorLi, C-
dc.contributor.authorRyu, GH-
dc.contributor.authorXu, W-
dc.contributor.authorHan, X-
dc.contributor.authorGuo, Z-
dc.contributor.authorWarner, JH-
dc.contributor.authorWu, J-
dc.contributor.authorLiu, H-
dc.date.accessioned2020-10-22T08:22:27Z-
dc.date.available2020-10-22T08:22:27Z-
dc.date.issued2020-
dc.identifier.citationNano-Micro Letters, 2020, v. 12, p. article no. 26-
dc.identifier.issn2311-6706-
dc.identifier.urihttp://hdl.handle.net/10722/290125-
dc.description.abstractTernary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.[Figure not available: see fulltext.]. © 2020, © 2020, The Author(s).-
dc.languageeng-
dc.publisherSpringerOpen. The Journal's web site is located at https://www.springer.com/journal/40820-
dc.relation.ispartofNano-Micro Letters-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectGraded bandgaps-
dc.subjectHomojunctions-
dc.subjectPhototransistors-
dc.subjectSelf-powered-
dc.subjectTransition metal dichalcogenides-
dc.titleSpatially Bandgap-Graded MoS2(1−x)Se2x Homojunctions for Self-Powered Visible–Near-Infrared Phototransistors-
dc.typeArticle-
dc.identifier.emailGuo, Z: zxguo@hku.hk-
dc.identifier.authorityGuo, Z=rp02451-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1007/s40820-019-0361-2-
dc.identifier.scopuseid_2-s2.0-85078259187-
dc.identifier.hkuros317056-
dc.identifier.volume12-
dc.identifier.spagearticle no. 26-
dc.identifier.epagearticle no. 26-
dc.identifier.isiWOS:000510847700012-
dc.publisher.placeGermany-
dc.identifier.issnl2150-5551-

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