File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides

TitleAmbipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides
Authors
Keywordsdensity functional theory
field‐effect transistors
self‐passivation
WOx
WSe2
Issue Date2020
PublisherWiley-VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www.ami-journal.com/
Citation
Advanced Materials Interfaces, 2020, v. 7 n. 1, p. article no. 1901628 How to Cite?
AbstractTransition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p‐type contacts for transition metal dichalcogenides. Here, ambipolar field‐effect transistors (FETs) enabled by bilayer WSe2 with self‐assembled TMOs (WO2.57) as contacts are reported. Systematic material characterizations demonstrate the formation of WO2.57/WSe2 heterojunctions around nanoflake edges with Se atoms substituted by O atoms after air‐exposure, while pristine properties of WSe2 almost sustain in inner domains. As‐fabricated FETs exhibit both polarities, implying WO2.57 with lowered WF at edges can serve as both the p‐type and n‐type contact for inner WSe2. Noteworthy, greatly reduced contact resistance and enhanced channel current are achieved, compared to the devices without WO2.57 contacts. Linear drain–source current relationship from 77 to 300 K indicates the ohmic contact between edge WO2.57 and inner WSe2. Density functional theory calculations further reveal that the WO2.57/WSe2 heterojunction forms a barrier‐less charge distribution. These nm‐scale FETs possess remarkable electrical conductivity up to ≈2600 S m−1, ultra‐low leakage current down to ≈10−12 A, robustness for high voltage operation, and air stability, which even outperform pristine WSe2 FETs. Theoretical calculations reveal that the high conductivity is exclusively attributed to the air‐induced WO2.57 and its further carrier injection to WSe2.
Persistent Identifierhttp://hdl.handle.net/10722/289657
ISSN
2019 Impact Factor: 4.948
2015 SCImago Journal Rankings: 1.177

 

DC FieldValueLanguage
dc.contributor.authorXu, H-
dc.contributor.authorHan, X-
dc.contributor.authorLiu, W-
dc.contributor.authorLiu, P-
dc.contributor.authorFang, H-
dc.contributor.authorLi, X-
dc.contributor.authorLi, Z-
dc.contributor.authorGuo, J-
dc.contributor.authorXiang, B-
dc.contributor.authorHu, W-
dc.contributor.authorParkin, IP-
dc.contributor.authorWu, J-
dc.contributor.authorGuo, Z-
dc.contributor.authorLiu, H-
dc.date.accessioned2020-10-22T08:15:38Z-
dc.date.available2020-10-22T08:15:38Z-
dc.date.issued2020-
dc.identifier.citationAdvanced Materials Interfaces, 2020, v. 7 n. 1, p. article no. 1901628-
dc.identifier.issn2196-7350-
dc.identifier.urihttp://hdl.handle.net/10722/289657-
dc.description.abstractTransition metal oxides (TMOs) with high work function (WF) show promising properties as unipolar p‐type contacts for transition metal dichalcogenides. Here, ambipolar field‐effect transistors (FETs) enabled by bilayer WSe2 with self‐assembled TMOs (WO2.57) as contacts are reported. Systematic material characterizations demonstrate the formation of WO2.57/WSe2 heterojunctions around nanoflake edges with Se atoms substituted by O atoms after air‐exposure, while pristine properties of WSe2 almost sustain in inner domains. As‐fabricated FETs exhibit both polarities, implying WO2.57 with lowered WF at edges can serve as both the p‐type and n‐type contact for inner WSe2. Noteworthy, greatly reduced contact resistance and enhanced channel current are achieved, compared to the devices without WO2.57 contacts. Linear drain–source current relationship from 77 to 300 K indicates the ohmic contact between edge WO2.57 and inner WSe2. Density functional theory calculations further reveal that the WO2.57/WSe2 heterojunction forms a barrier‐less charge distribution. These nm‐scale FETs possess remarkable electrical conductivity up to ≈2600 S m−1, ultra‐low leakage current down to ≈10−12 A, robustness for high voltage operation, and air stability, which even outperform pristine WSe2 FETs. Theoretical calculations reveal that the high conductivity is exclusively attributed to the air‐induced WO2.57 and its further carrier injection to WSe2.-
dc.languageeng-
dc.publisherWiley-VCH Verlag GmbH & Co. KGaA. The Journal's web site is located at http://www.ami-journal.com/-
dc.relation.ispartofAdvanced Materials Interfaces-
dc.rightsThis is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectdensity functional theory-
dc.subjectfield‐effect transistors-
dc.subjectself‐passivation-
dc.subjectWOx-
dc.subjectWSe2-
dc.titleAmbipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides-
dc.typeArticle-
dc.identifier.emailGuo, Z: zxguo@hku.hk-
dc.identifier.authorityGuo, Z=rp02451-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/admi.201901628-
dc.identifier.scopuseid_2-s2.0-85076098490-
dc.identifier.hkuros317123-
dc.identifier.volume7-
dc.identifier.issue1-
dc.identifier.spagearticle no. 1901628-
dc.identifier.epagearticle no. 1901628-
dc.publisher.placeGermany-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats