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Article: Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection

TitleV<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection
Authors
Keywordsnegative bias temperature instability (NBTI)
Graphene field-effect transistors (GFETs)
Raman
positive bias temperature instability (PBTI)
Issue Date2012
Citation
IEEE Transactions on Device and Materials Reliability, 2012, v. 12, n. 2, p. 478-481 How to Cite?
AbstractRaman measurement is carried out to understand V th shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔV th during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H 2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔV th for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286869
ISSN
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, W. J.-
dc.contributor.authorSun, X. W.-
dc.contributor.authorTran, X. A.-
dc.contributor.authorFang, Z.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorWang, F.-
dc.contributor.authorWu, L.-
dc.contributor.authorZhang, J. F.-
dc.contributor.authorWei, J.-
dc.contributor.authorZhu, H. L.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:53Z-
dc.date.available2020-09-07T11:45:53Z-
dc.date.issued2012-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2012, v. 12, n. 2, p. 478-481-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/286869-
dc.description.abstractRaman measurement is carried out to understand V th shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔV th during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H 2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔV th for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.subjectnegative bias temperature instability (NBTI)-
dc.subjectGraphene field-effect transistors (GFETs)-
dc.subjectRaman-
dc.subjectpositive bias temperature instability (PBTI)-
dc.titleV<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TDMR.2012.2190414-
dc.identifier.scopuseid_2-s2.0-84862016676-
dc.identifier.volume12-
dc.identifier.issue2-
dc.identifier.spage478-
dc.identifier.epage481-
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000305085100038-
dc.identifier.issnl1530-4388-

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