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Article: A Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer

TitleA Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer
Authors
Keywordsdoping
molecular beam epitaxy
scanning transmission electron microscopy
scanning tunneling microscopy
transition metal dichalcogenide monolayers
Issue Date2019
PublisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X
Citation
Advanced Electronic Materials, 2019, Epub, p. article no. 1900830 How to Cite?
AbstractTuning the conductivity and other electronic properties by doping in ultrathin layers of transition‐metal dichalcogenides is of great scientific and practical interest. As with traditional semiconductors, controllable doping is essential for device applications of the materials. Here, hole doping in epitaxial MoSe2 by phosphorus (P) are reported, where substitutional P at the Se sites acts as a shallow acceptor. P substituting Se in MoSe2 is identified by annular dark field scanning transmission electron microscopy, Auger electron spectroscopy, and X‐ray photoelectron spectroscopy. Scanning tunneling spectroscopy and ultraviolet photoemission spectroscopy reveal in‐gap defect states and Fermi‐level shifts, suggesting the hole doping effect of substitutional P. Combining with density functional theory calculation and partial charge analysis, the binding energies of impurity levels of group V elements in a MoSe2 monolayer are elucidated, where the dopant energy level becomes shallower with increasing atomic mass.
Persistent Identifierhttp://hdl.handle.net/10722/279998
ISSN
2019 Impact Factor: 6.593

 

DC FieldValueLanguage
dc.contributor.authorXia, Y-
dc.contributor.authorZhang, J-
dc.contributor.authorYu, Z-
dc.contributor.authorJIN, Y-
dc.contributor.authorTian, H-
dc.contributor.authorFeng, Y-
dc.contributor.authorLi, B-
dc.contributor.authorHo, W-
dc.contributor.authorLiu, C-
dc.contributor.authorXu, H-
dc.contributor.authorJin, C-
dc.contributor.authorXie, M-
dc.date.accessioned2019-12-23T08:24:46Z-
dc.date.available2019-12-23T08:24:46Z-
dc.date.issued2019-
dc.identifier.citationAdvanced Electronic Materials, 2019, Epub, p. article no. 1900830-
dc.identifier.issn2199-160X-
dc.identifier.urihttp://hdl.handle.net/10722/279998-
dc.description.abstractTuning the conductivity and other electronic properties by doping in ultrathin layers of transition‐metal dichalcogenides is of great scientific and practical interest. As with traditional semiconductors, controllable doping is essential for device applications of the materials. Here, hole doping in epitaxial MoSe2 by phosphorus (P) are reported, where substitutional P at the Se sites acts as a shallow acceptor. P substituting Se in MoSe2 is identified by annular dark field scanning transmission electron microscopy, Auger electron spectroscopy, and X‐ray photoelectron spectroscopy. Scanning tunneling spectroscopy and ultraviolet photoemission spectroscopy reveal in‐gap defect states and Fermi‐level shifts, suggesting the hole doping effect of substitutional P. Combining with density functional theory calculation and partial charge analysis, the binding energies of impurity levels of group V elements in a MoSe2 monolayer are elucidated, where the dopant energy level becomes shallower with increasing atomic mass.-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co. KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)2199-160X-
dc.relation.ispartofAdvanced Electronic Materials-
dc.rightsThis is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions.-
dc.subjectdoping-
dc.subjectmolecular beam epitaxy-
dc.subjectscanning transmission electron microscopy-
dc.subjectscanning tunneling microscopy-
dc.subjecttransition metal dichalcogenide monolayers-
dc.titleA Shallow Acceptor of Phosphorous Doped in MoSe2 Monolayer-
dc.typeArticle-
dc.identifier.emailXia, Y: xiayp@HKUCC-COM.hku.hk-
dc.identifier.emailZhang, J: jqzhang1@HKUCC-COM.hku.hk-
dc.identifier.emailHo, W: howk@hku.hk-
dc.identifier.emailXie, M: physhead@hku.hk-
dc.identifier.authorityXie, M=rp00818-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/aelm.201900830-
dc.identifier.scopuseid_2-s2.0-85074843283-
dc.identifier.hkuros308727-
dc.identifier.spagearticle no. 1900830-
dc.identifier.epagearticle no. 1900830-
dc.publisher.placeGermany-

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