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- Publisher Website: 10.1109/NUSOD.2018.8570276
- Scopus: eid_2-s2.0-85060022818
- WOS: WOS:000458689000051
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Conference Paper: Designing microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics
Title | Designing microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics |
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Authors | |
Keywords | III-Nitride Molecular Dynamics Quantum wells |
Issue Date | 2018 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000510 |
Citation | Proceedings of the 18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018), Hong Kong, China, 5-9 November 2018, p. 101-102 How to Cite? |
Abstract | In this work, we present the design of InGaN microstructures by manipulation of quantum well bandgap via strain engineering. By coupling strain field extracted from molecular dynamics simulation to k.p simulation, we are able to associate the effect of geometry and strain of a structure to its light emission. |
Persistent Identifier | http://hdl.handle.net/10722/275282 |
ISBN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Fu, WY | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2019-09-10T02:39:22Z | - |
dc.date.available | 2019-09-10T02:39:22Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Proceedings of the 18th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2018), Hong Kong, China, 5-9 November 2018, p. 101-102 | - |
dc.identifier.isbn | 9781538655993 | - |
dc.identifier.uri | http://hdl.handle.net/10722/275282 | - |
dc.description.abstract | In this work, we present the design of InGaN microstructures by manipulation of quantum well bandgap via strain engineering. By coupling strain field extracted from molecular dynamics simulation to k.p simulation, we are able to associate the effect of geometry and strain of a structure to its light emission. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000510 | - |
dc.relation.ispartof | Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices | - |
dc.rights | ©2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | III-Nitride | - |
dc.subject | Molecular Dynamics | - |
dc.subject | Quantum wells | - |
dc.title | Designing microstructures for bandgap manipulation of InGaN Quantum Wells by k.p simulation coupled with molecular dynamics | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Fu, WYG: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.description.nature | postprint | - |
dc.identifier.doi | 10.1109/NUSOD.2018.8570276 | - |
dc.identifier.scopus | eid_2-s2.0-85060022818 | - |
dc.identifier.hkuros | 305155 | - |
dc.identifier.hkuros | 303056 | - |
dc.identifier.spage | 101 | - |
dc.identifier.epage | 102 | - |
dc.identifier.isi | WOS:000458689000051 | - |
dc.publisher.place | United States | - |