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Article: Highly Efficient Planar Perovskite Solar Cells Achieved by Simultaneous Defect Engineering and Formation Kinetic Control

TitleHighly Efficient Planar Perovskite Solar Cells Achieved by Simultaneous Defect Engineering and Formation Kinetic Control
Authors
Issue Date2018
PublisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ta#!recentarticles&all
Citation
Journal of Materials Chemistry A, 2018, v. 6 n. 46, p. 23865-23874 How to Cite?
AbstractThe formation of high quality (good morphology and low defect concentrations) perovskite films is crucial for realizing high-performance perovskite solar cells (PVSCs). Low-temperature processed perovskite films tend to have a high density of defect states, which hinder the enhancement of their device performance. Although various post-treatment methods have been reported to passivate the surface defects of perovskite, the critical issue is that defects inside the bulk film cannot be passivated simultaneously. Here, we demonstrate a new strategy of simultaneously controlling the perovskite formation kinetics and reducing the defects (e.g., unsaturated Pb) for achieving densely packed perovskite films with low defect concentrations. The strategy is realized through incorporating cyano-based small molecules into perovskite precursor. Our results show that the inverted planar-structured PVSCs with the perovskite films formed by the new strategy have significant performance improvement with PCE reaching 20.10%, which is among the highest values of low-temperature processed solar cells. This work provides a new strategy to further improve the quality of low-temperature processed perovskite films and the relevant device performances.
Persistent Identifierhttp://hdl.handle.net/10722/265070
ISSN
2017 Impact Factor: 9.931
2015 SCImago Journal Rankings: 2.770
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, J-
dc.contributor.authorZhang, H-
dc.contributor.authorZhang, S-
dc.contributor.authorOuyang, D-
dc.contributor.authorHuang, Z-
dc.contributor.authorNazeeruddin, MK-
dc.contributor.authorHou, J-
dc.contributor.authorChoy, WCH-
dc.date.accessioned2018-11-20T01:59:35Z-
dc.date.available2018-11-20T01:59:35Z-
dc.date.issued2018-
dc.identifier.citationJournal of Materials Chemistry A, 2018, v. 6 n. 46, p. 23865-23874-
dc.identifier.issn2050-7488-
dc.identifier.urihttp://hdl.handle.net/10722/265070-
dc.description.abstractThe formation of high quality (good morphology and low defect concentrations) perovskite films is crucial for realizing high-performance perovskite solar cells (PVSCs). Low-temperature processed perovskite films tend to have a high density of defect states, which hinder the enhancement of their device performance. Although various post-treatment methods have been reported to passivate the surface defects of perovskite, the critical issue is that defects inside the bulk film cannot be passivated simultaneously. Here, we demonstrate a new strategy of simultaneously controlling the perovskite formation kinetics and reducing the defects (e.g., unsaturated Pb) for achieving densely packed perovskite films with low defect concentrations. The strategy is realized through incorporating cyano-based small molecules into perovskite precursor. Our results show that the inverted planar-structured PVSCs with the perovskite films formed by the new strategy have significant performance improvement with PCE reaching 20.10%, which is among the highest values of low-temperature processed solar cells. This work provides a new strategy to further improve the quality of low-temperature processed perovskite films and the relevant device performances.-
dc.languageeng-
dc.publisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/ta#!recentarticles&all-
dc.relation.ispartofJournal of Materials Chemistry A-
dc.titleHighly Efficient Planar Perovskite Solar Cells Achieved by Simultaneous Defect Engineering and Formation Kinetic Control-
dc.typeArticle-
dc.identifier.emailZhang, H: hzhang@eee.hku.hk-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1039/C8TA08819E-
dc.identifier.scopuseid_2-s2.0-85057525095-
dc.identifier.hkuros296132-
dc.identifier.volume6-
dc.identifier.issue46-
dc.identifier.spage23865-
dc.identifier.epage23874-
dc.identifier.isiWOS:000451813300068-
dc.publisher.placeUnited Kingdom-

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