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- Publisher Website: 10.1002/adfm.201706403
- Scopus: eid_2-s2.0-85042013605
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Article: Self‐Assembled Quasi‐3D Nanocomposite: A Novel p‐Type Hole Transport Layer for High Performance Inverted Organic Solar Cells
Title | Self‐Assembled Quasi‐3D Nanocomposite: A Novel p‐Type Hole Transport Layer for High Performance Inverted Organic Solar Cells |
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Authors | |
Keywords | hole transport layers non-fullerene solar cells organic solar cells quasi-3D nanocomposite stability |
Issue Date | 2018 |
Publisher | Wiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm |
Citation | Advanced Functional Materials, 2018, v. 28 n. 15, p. 1706403 How to Cite? |
Abstract | Hole transport layer (HTL) plays a critical role for achieving high performance solution‐processed optoelectronics including organic electronics. For organic solar cells (OSCs), the inverted structure has been widely adopted to achieve prolonged stability. However, there are limited studies of p‐type effective HTL on top of the organic active layer (hereafter named as top HTL) for inverted OSCs. Currently, p‐type top HTLs are mainly 2D materials, which have an intrinsic vertical conduction limitation and are too thin to function as practical HTL for large area optoelectronic applications. In the present study, a novel self‐assembled quasi‐3D nanocomposite is demonstrated as a p‐type top HTL. Remarkably, the novel HTL achieves ≈15 times enhanced conductivity and ≈16 times extended thickness compared to the 2D counterpart. By applying this novel HTL in inverted OSCs covering fullerene and non‐fullerene systems, device performance is significantly improved. The champion power conversion efficiency reaches 12.13%, which is the highest reported performance of solution processed HTL based inverted OSCs. Furthermore, the stability of OSCs is dramatically enhanced compared with conventional devices. The work contributes to not only evolving the highly stable and large scale OSCs for practical applications but also diversifying the strategies to improve device performance. |
Persistent Identifier | http://hdl.handle.net/10722/259316 |
ISSN | 2021 Impact Factor: 19.924 2020 SCImago Journal Rankings: 6.069 |
ISI Accession Number ID | |
Grants |
DC Field | Value | Language |
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dc.contributor.author | Cheng, J | - |
dc.contributor.author | Zhang, H | - |
dc.contributor.author | Zhao, Y | - |
dc.contributor.author | Mao, J | - |
dc.contributor.author | Li, C | - |
dc.contributor.author | Zhang, S | - |
dc.contributor.author | Wong, KS | - |
dc.contributor.author | Hou, J | - |
dc.contributor.author | Choy, WCH | - |
dc.date.accessioned | 2018-09-03T04:05:05Z | - |
dc.date.available | 2018-09-03T04:05:05Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Advanced Functional Materials, 2018, v. 28 n. 15, p. 1706403 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | http://hdl.handle.net/10722/259316 | - |
dc.description.abstract | Hole transport layer (HTL) plays a critical role for achieving high performance solution‐processed optoelectronics including organic electronics. For organic solar cells (OSCs), the inverted structure has been widely adopted to achieve prolonged stability. However, there are limited studies of p‐type effective HTL on top of the organic active layer (hereafter named as top HTL) for inverted OSCs. Currently, p‐type top HTLs are mainly 2D materials, which have an intrinsic vertical conduction limitation and are too thin to function as practical HTL for large area optoelectronic applications. In the present study, a novel self‐assembled quasi‐3D nanocomposite is demonstrated as a p‐type top HTL. Remarkably, the novel HTL achieves ≈15 times enhanced conductivity and ≈16 times extended thickness compared to the 2D counterpart. By applying this novel HTL in inverted OSCs covering fullerene and non‐fullerene systems, device performance is significantly improved. The champion power conversion efficiency reaches 12.13%, which is the highest reported performance of solution processed HTL based inverted OSCs. Furthermore, the stability of OSCs is dramatically enhanced compared with conventional devices. The work contributes to not only evolving the highly stable and large scale OSCs for practical applications but also diversifying the strategies to improve device performance. | - |
dc.language | eng | - |
dc.publisher | Wiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/home/afm | - |
dc.relation.ispartof | Advanced Functional Materials | - |
dc.rights | Preprint This is the pre-peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article]. Authors are not required to remove preprints posted prior to acceptance of the submitted version. Postprint This is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving: http://olabout.wiley.com/WileyCDA/Section/id-828039.html#terms | - |
dc.subject | hole transport layers | - |
dc.subject | non-fullerene solar cells | - |
dc.subject | organic solar cells | - |
dc.subject | quasi-3D nanocomposite | - |
dc.subject | stability | - |
dc.title | Self‐Assembled Quasi‐3D Nanocomposite: A Novel p‐Type Hole Transport Layer for High Performance Inverted Organic Solar Cells | - |
dc.type | Article | - |
dc.identifier.email | Choy, WCH: chchoy@eee.hku.hk | - |
dc.identifier.authority | Choy, WCH=rp00218 | - |
dc.identifier.doi | 10.1002/adfm.201706403 | - |
dc.identifier.scopus | eid_2-s2.0-85042013605 | - |
dc.identifier.hkuros | 289880 | - |
dc.identifier.volume | 28 | - |
dc.identifier.issue | 15 | - |
dc.identifier.spage | 1706403 | - |
dc.identifier.epage | 1706403 | - |
dc.identifier.isi | WOS:000430101100019 | - |
dc.publisher.place | Germany | - |
dc.relation.project | Inert-environment facilities for investigating optical-electrical-thermal properties of hybrid structure optoelectronics | - |
dc.identifier.issnl | 1616-301X | - |