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Article: Janus monolayers of transition metal dichalcogenides

TitleJanus monolayers of transition metal dichalcogenides
Authors
Issue Date2017
PublisherNature Publishing Group.
Citation
Nature Nanotechnology, 2017, v. 12 n. 8, p. 744-749 How to Cite?
AbstractStructural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS 2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements. © 2017 Macmillan Publishers Limited, part of Springer Nature.
Persistent Identifierhttp://hdl.handle.net/10722/257371
ISSN
2015 Impact Factor: 35.267
2015 SCImago Journal Rankings: 19.832

 

DC FieldValueLanguage
dc.contributor.authorLu, AY-
dc.contributor.authorZhu, H-
dc.contributor.authorXiao, J-
dc.contributor.authorChuu, CP-
dc.contributor.authorHan, Y-
dc.contributor.authorChiu, MH-
dc.contributor.authorCheng, CC-
dc.contributor.authorYang, CW-
dc.contributor.authorWei, KH-
dc.contributor.authorYang, Y-
dc.contributor.authorWang, Y-
dc.contributor.authorSokaras, D-
dc.contributor.authorNordlund, D-
dc.contributor.authorYang, P-
dc.contributor.authorMuller, DA-
dc.contributor.authorChou, MY-
dc.contributor.authorZhang, X-
dc.contributor.authorLi, LJ-
dc.date.accessioned2018-07-27T08:37:02Z-
dc.date.available2018-07-27T08:37:02Z-
dc.date.issued2017-
dc.identifier.citationNature Nanotechnology, 2017, v. 12 n. 8, p. 744-749-
dc.identifier.issn1748-3387-
dc.identifier.urihttp://hdl.handle.net/10722/257371-
dc.description.abstractStructural symmetry-breaking plays a crucial role in determining the electronic band structures of two-dimensional materials. Tremendous efforts have been devoted to breaking the in-plane symmetry of graphene with electric fields on AB-stacked bilayers or stacked van der Waals heterostructures. In contrast, transition metal dichalcogenide monolayers are semiconductors with intrinsic in-plane asymmetry, leading to direct electronic bandgaps, distinctive optical properties and great potential in optoelectronics. Apart from their in-plane inversion asymmetry, an additional degree of freedom allowing spin manipulation can be induced by breaking the out-of-plane mirror symmetry with external electric fields or, as theoretically proposed, with an asymmetric out-of-plane structural configuration. Here, we report a synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry. In particular, based on a MoS 2 monolayer, we fully replace the top-layer S with Se atoms. We confirm the Janus structure of MoSSe directly by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy, and prove the existence of vertical dipoles by second harmonic generation and piezoresponse force microscopy measurements. © 2017 Macmillan Publishers Limited, part of Springer Nature.-
dc.languageeng-
dc.publisherNature Publishing Group.-
dc.relation.ispartofNature Nanotechnology-
dc.titleJanus monolayers of transition metal dichalcogenides-
dc.typeArticle-
dc.identifier.emailZhang, X: president@hku.hk-
dc.identifier.authorityZhang, X=rp02411-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1038/nnano.2017.100-
dc.identifier.scopuseid_2-s2.0-85026870772-
dc.identifier.volume12-
dc.identifier.issue8-
dc.identifier.spage744-
dc.identifier.epage749-
dc.publisher.placeUnited Kingdom-

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