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Article: Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity

TitleEpitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity
Authors
Keywordselectron–phonon coupling
gallium nitride
single-layer molybdenum disulfide
substrate engineering
valley helicity
Issue Date2018
PublisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089
Citation
Advanced Materials, 2018, v. 30 n. 5, p. 1703888 How to Cite?
AbstractEngineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Persistent Identifierhttp://hdl.handle.net/10722/257365
ISSN
2017 Impact Factor: 21.95
2015 SCImago Journal Rankings: 9.021

 

DC FieldValueLanguage
dc.contributor.authorWan, Y-
dc.contributor.authorXiao, J-
dc.contributor.authorLi, J-
dc.contributor.authorFang, X-
dc.contributor.authorZhang, K-
dc.contributor.authorFu, L-
dc.contributor.authorLi, P-
dc.contributor.authorSong, Z-
dc.contributor.authorZhang, H-
dc.contributor.authorWang, Y-
dc.contributor.authorZhao, M-
dc.contributor.authorLu, J-
dc.contributor.authorTang, N-
dc.contributor.authorRan, G-
dc.contributor.authorZhang, X-
dc.contributor.authorYe, Y-
dc.contributor.authorDai, L-
dc.date.accessioned2018-07-27T07:49:18Z-
dc.date.available2018-07-27T07:49:18Z-
dc.date.issued2018-
dc.identifier.citationAdvanced Materials, 2018, v. 30 n. 5, p. 1703888-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/257365-
dc.description.abstractEngineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec−1 at room temperature based on bilayer n-MoS2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron–phonon interaction, resulting in a short exciton lifetime in the MoS2/GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.languageeng-
dc.publisherWiley - VCH Verlag GmbH & Co KGaA. The Journal's web site is located at http://www.wiley-vch.de/publish/en/journals/alphabeticIndex/2089-
dc.relation.ispartofAdvanced Materials-
dc.rightsPreprint This is the pre-peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article]. Authors are not required to remove preprints posted prior to acceptance of the submitted version. Postprint This is the peer reviewed version of the following article: [FULL CITE], which has been published in final form at [Link to final article using the DOI]. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving: http://olabout.wiley.com/WileyCDA/Section/id-828039.html#terms-
dc.subjectelectron–phonon coupling-
dc.subjectgallium nitride-
dc.subjectsingle-layer molybdenum disulfide-
dc.subjectsubstrate engineering-
dc.subjectvalley helicity-
dc.titleEpitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity-
dc.typeArticle-
dc.identifier.emailZhang, X: president@hku.hk-
dc.identifier.authorityZhang, X=rp02411-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.201703888-
dc.identifier.scopuseid_2-s2.0-85038385159-
dc.identifier.volume30-
dc.identifier.issue5-
dc.identifier.spage1703888-
dc.identifier.epage1703888-
dc.publisher.placeGermany-

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