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Conference Paper: λ-size silicon-based modulator

Titleλ-size silicon-based modulator
Authors
KeywordsPlasmonic
Integration
Electro-optic modulator
Broadband
Modulator
Monolithic
Nanophotonic
Silicon-on-insulator
Issue Date2013
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 2013, v. 8629 How to Cite?
AbstractElectro-optic modulators have been identified as the key drivers for optical communication. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like Graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires devices lengths of tens of micrometers due to the inefficient overlap between the Graphene layer and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, Silicon-based, electro-optic modulator with a record-high 1dB per micrometer extinction ratio over a wide bandwidth range of 500 nm in ambient conditions. The device is based on a plasmonic Metal-Oxide-Semiconductor (MOS) waveguide, which efficiently concentrates the optical modes' electric field into a nanometer thin region comprised of an absorption coefficient-tuneable Indium-Tin-Oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits. © 2013 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/257151
ISSN

 

DC FieldValueLanguage
dc.contributor.authorSorger, Volker J.-
dc.contributor.authorLanzillotti-Kimura, Norberto D.-
dc.contributor.authorMa, Ren Min-
dc.contributor.authorHuang, Chen-
dc.contributor.authorLi, Zhuoran-
dc.contributor.authorZhang, Xiang-
dc.date.accessioned2018-07-24T08:58:59Z-
dc.date.available2018-07-24T08:58:59Z-
dc.date.issued2013-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2013, v. 8629-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/257151-
dc.description.abstractElectro-optic modulators have been identified as the key drivers for optical communication. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrificing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of significantly sacrificing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like Graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires devices lengths of tens of micrometers due to the inefficient overlap between the Graphene layer and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, Silicon-based, electro-optic modulator with a record-high 1dB per micrometer extinction ratio over a wide bandwidth range of 500 nm in ambient conditions. The device is based on a plasmonic Metal-Oxide-Semiconductor (MOS) waveguide, which efficiently concentrates the optical modes' electric field into a nanometer thin region comprised of an absorption coefficient-tuneable Indium-Tin-Oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears significant potential towards broadband, compact and efficient communication links and circuits. © 2013 SPIE.-
dc.languageeng-
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineering-
dc.subjectPlasmonic-
dc.subjectIntegration-
dc.subjectElectro-optic modulator-
dc.subjectBroadband-
dc.subjectModulator-
dc.subjectMonolithic-
dc.subjectNanophotonic-
dc.subjectSilicon-on-insulator-
dc.titleλ-size silicon-based modulator-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.2001338-
dc.identifier.scopuseid_2-s2.0-84878309738-
dc.identifier.volume8629-
dc.identifier.spagenull-
dc.identifier.epagenull-

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