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Article: High energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability

TitleHigh energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability
Authors
Issue Date2018
PublisherElsevier Science SA. The Journal's web site is located at http://www.elsevier.com/locate/jallcom
Citation
Journal of Alloys and Compounds, 2018, v. 757, p. 169-176 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/256385
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTang, Z-
dc.contributor.authorGe, J-
dc.contributor.authorNi, H-
dc.contributor.authorLu, B-
dc.contributor.authorTang, XG-
dc.contributor.authorLu, SG-
dc.contributor.authorTang, MH-
dc.contributor.authorGao, J-
dc.date.accessioned2018-07-20T06:33:50Z-
dc.date.available2018-07-20T06:33:50Z-
dc.date.issued2018-
dc.identifier.citationJournal of Alloys and Compounds, 2018, v. 757, p. 169-176-
dc.identifier.urihttp://hdl.handle.net/10722/256385-
dc.languageeng-
dc.publisherElsevier Science SA. The Journal's web site is located at http://www.elsevier.com/locate/jallcom-
dc.relation.ispartofJournal of Alloys and Compounds-
dc.titleHigh energy-storage density of lead-free BiFeO3 doped Na0.5Bi0.5TiO3-BaTiO3 thin film capacitor with good temperature stability-
dc.typeArticle-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.identifier.doi10.1016/j.jallcom.2018.05.072-
dc.identifier.hkuros286352-
dc.identifier.volume757-
dc.identifier.spage169-
dc.identifier.epage176-
dc.identifier.isiWOS:000433609100022-

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