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Article: Strain-modulated excitonic gaps in mono- and bi-layer MoSe2

TitleStrain-modulated excitonic gaps in mono- and bi-layer MoSe<inf>2</inf>
Authors
Keywordsphotoluminescence
strain
low-dimensional semiconductors
Issue Date2016
Citation
Chinese Physics B, 2016, v. 25, n. 7 How to Cite?
Abstract© 2016 Chinese Physical Society and IOP Publishing Ltd. Photoluminescence (PL) and Raman spectra under uniaxial strain were measured in mono- and bi-layer MoSe 2 to comparatively investigate the evolution of excitonic gaps and Raman phonons with strain. We observed that the strain dependence of excitonic gaps shows a nearly linear behavior in both flakes. One percent of strain increase gives a reduction of ∼ 42 meV (∼ 35 meV) in A-exciton gap in monolayer (bilayer) MoSe 2 . The PL width remains little changed in monolayer MoSe 2 while it increases rapidly with strain in the bilayer case. We have made detailed discussions on the observed strain-modulated results and compared the difference between monolayer and bilayer cases. The hybridization between 4d orbits of Mo and 4p orbits of Se, which is controlled by the Se-Mo-Se bond angle under strain, can be employed to consistently explain the observations. The study may shed light into exciton physics in few-layer MoSe 2 and provides a basis for their applications.
Persistent Identifierhttp://hdl.handle.net/10722/254458
ISSN
2015 Impact Factor: 1.436
2015 SCImago Journal Rankings: 0.248

 

DC FieldValueLanguage
dc.contributor.authorJi, Jianting-
dc.contributor.authorZhang, Anmin-
dc.contributor.authorXia, Tianlong-
dc.contributor.authorGao, Po-
dc.contributor.authorJie, Yinghao-
dc.contributor.authorZhang, Qian-
dc.contributor.authorZhang, Qingming-
dc.date.accessioned2018-06-19T15:40:36Z-
dc.date.available2018-06-19T15:40:36Z-
dc.date.issued2016-
dc.identifier.citationChinese Physics B, 2016, v. 25, n. 7-
dc.identifier.issn1674-1056-
dc.identifier.urihttp://hdl.handle.net/10722/254458-
dc.description.abstract© 2016 Chinese Physical Society and IOP Publishing Ltd. Photoluminescence (PL) and Raman spectra under uniaxial strain were measured in mono- and bi-layer MoSe 2 to comparatively investigate the evolution of excitonic gaps and Raman phonons with strain. We observed that the strain dependence of excitonic gaps shows a nearly linear behavior in both flakes. One percent of strain increase gives a reduction of ∼ 42 meV (∼ 35 meV) in A-exciton gap in monolayer (bilayer) MoSe 2 . The PL width remains little changed in monolayer MoSe 2 while it increases rapidly with strain in the bilayer case. We have made detailed discussions on the observed strain-modulated results and compared the difference between monolayer and bilayer cases. The hybridization between 4d orbits of Mo and 4p orbits of Se, which is controlled by the Se-Mo-Se bond angle under strain, can be employed to consistently explain the observations. The study may shed light into exciton physics in few-layer MoSe 2 and provides a basis for their applications.-
dc.languageeng-
dc.relation.ispartofChinese Physics B-
dc.subjectphotoluminescence-
dc.subjectstrain-
dc.subjectlow-dimensional semiconductors-
dc.titleStrain-modulated excitonic gaps in mono- and bi-layer MoSe<inf>2</inf>-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1674-1056/25/7/077802-
dc.identifier.scopuseid_2-s2.0-84978285027-
dc.identifier.volume25-
dc.identifier.issue7-
dc.identifier.spagenull-
dc.identifier.epagenull-

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