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Article: Optically Tunable Resistive-Switching Memory in Multiferroic Heterostructures

TitleOptically Tunable Resistive-Switching Memory in Multiferroic Heterostructures
Authors
Issue Date2018
PublisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prapplied/
Citation
Physical Review Applied, 2018, v. 9 n. 4, article no. 044039 , p. 1-7 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/253568
ISSN
2017 Impact Factor: 4.782
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZheng, M-
dc.contributor.authorNi, H-
dc.contributor.authorXu, XK-
dc.contributor.authorQI, Y-
dc.contributor.authorLi, XM-
dc.contributor.authorGao, J-
dc.date.accessioned2018-05-21T02:59:45Z-
dc.date.available2018-05-21T02:59:45Z-
dc.date.issued2018-
dc.identifier.citationPhysical Review Applied, 2018, v. 9 n. 4, article no. 044039 , p. 1-7-
dc.identifier.issn2331-7019-
dc.identifier.urihttp://hdl.handle.net/10722/253568-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://journals.aps.org/prapplied/-
dc.relation.ispartofPhysical Review Applied-
dc.rightsCopyright 2018 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevApplied.9.044039-
dc.titleOptically Tunable Resistive-Switching Memory in Multiferroic Heterostructures-
dc.typeArticle-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevApplied.9.044039-
dc.identifier.hkuros285157-
dc.identifier.volume9-
dc.identifier.issue4-
dc.identifier.spagearticle no. 044039, p. 1-
dc.identifier.epagearticle no. 044039, p. 7-
dc.identifier.isiWOS:000430911800004-
dc.publisher.placeUnited States-

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