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Conference Paper: Optical Characterization of Fe-Doped GaN Epilayers Grown on Sapphire
| Title | Optical Characterization of Fe-Doped GaN Epilayers Grown on Sapphire |
|---|---|
| Authors | |
| Issue Date | 2015 |
| Publisher | The Materials Research Society of Singapore (MRS-S). |
| Citation | 8th International Conference on Materials for Advanced Technologies (ICMAT 2015) & 16th IUMRS International Conference in Asia (IUMRS-ICA 2015) together with 4th Photonics Global Conference 2015, Suntec, Singapore, 28 June - 3 July 2015 How to Cite? |
| Abstract | Effects of Fe doping were investigated in detail on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates by confocal micro-Raman spectroscopy and photoluminescence. Our results reveal that the compressive strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of A1(LO)-plasmon coupled mode. In addition, the characteristic emission lines of Fe impurities in GaN were observed and analyzed. |
| Persistent Identifier | http://hdl.handle.net/10722/252877 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xu, S | - |
| dc.date.accessioned | 2018-05-08T08:01:36Z | - |
| dc.date.available | 2018-05-08T08:01:36Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.citation | 8th International Conference on Materials for Advanced Technologies (ICMAT 2015) & 16th IUMRS International Conference in Asia (IUMRS-ICA 2015) together with 4th Photonics Global Conference 2015, Suntec, Singapore, 28 June - 3 July 2015 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/252877 | - |
| dc.description.abstract | Effects of Fe doping were investigated in detail on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates by confocal micro-Raman spectroscopy and photoluminescence. Our results reveal that the compressive strain in the Fe-doped GaN epilayers tends to relax as the Fe concentration increases. This finding is further supported by X-ray diffraction measurements. The influence of Fe doping on the background electron concentration was also discussed by analyzing the upper branch of A1(LO)-plasmon coupled mode. In addition, the characteristic emission lines of Fe impurities in GaN were observed and analyzed. | - |
| dc.language | eng | - |
| dc.publisher | The Materials Research Society of Singapore (MRS-S). | - |
| dc.relation.ispartof | International Conference on Materials for Advanced Technologies (ICMAT) & IUMRS International Conference in Asia (IUMRS-ICA) | - |
| dc.title | Optical Characterization of Fe-Doped GaN Epilayers Grown on Sapphire | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Xu, S: sjxu@hku.hk | - |
| dc.identifier.authority | Xu, S=rp00821 | - |
| dc.identifier.hkuros | 251650 | - |
| dc.publisher.place | Suntec, Singapore | - |