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Article: A novel electrically controllable volatile memory device based on few-layer black phosphorus

TitleA novel electrically controllable volatile memory device based on few-layer black phosphorus
Authors
Issue Date2018
PublisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/tc#!recentarticles&all
Citation
Journal of Materials Chemistry C, 2018, v. 6 n. 10, p. 2460-2466 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/252705
ISSN
2017 Impact Factor: 5.976

 

DC FieldValueLanguage
dc.contributor.authorZhang, L-
dc.contributor.authorYu, ZZ-
dc.contributor.authorZhang, L-
dc.contributor.authorZheng, XH-
dc.contributor.authorXiao, LT-
dc.contributor.authorJia, ST-
dc.contributor.authorWang, J-
dc.date.accessioned2018-05-02T02:33:50Z-
dc.date.available2018-05-02T02:33:50Z-
dc.date.issued2018-
dc.identifier.citationJournal of Materials Chemistry C, 2018, v. 6 n. 10, p. 2460-2466-
dc.identifier.issn2050-7526-
dc.identifier.urihttp://hdl.handle.net/10722/252705-
dc.languageeng-
dc.publisherRSC Publications. The Journal's web site is located at http://pubs.rsc.org/en/journals/journalissues/tc#!recentarticles&all-
dc.relation.ispartofJournal of Materials Chemistry C-
dc.titleA novel electrically controllable volatile memory device based on few-layer black phosphorus-
dc.typeArticle-
dc.identifier.emailZhang, L: lzphy@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityZhang, L=rp02133-
dc.identifier.authorityWang, J=rp00799-
dc.identifier.doi10.1039/C7TC05083F-
dc.identifier.hkuros284952-
dc.identifier.volume6-
dc.identifier.issue10-
dc.identifier.spage2460-
dc.identifier.epage2466-
dc.publisher.placeUnited Kingdom-

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