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Article: Fabrication and Modification of n-ZnO/p-GaN Heterojunction Light Emitting Diodes with White Light Emission Characteristics

TitleFabrication and Modification of n-ZnO/p-GaN Heterojunction Light Emitting Diodes with White Light Emission Characteristics
Authors
Issue Date2017
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://www.aspbs.com/nnl/
Citation
Nanoscience and Nanotechnology Letters, 2017, v. 9 n. 6, p. 880-884 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/249305
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSu, S-
dc.contributor.authorLing, FCC-
dc.contributor.authorAzad, F-
dc.contributor.authorZeng, H-
dc.contributor.authorLu, YM-
dc.contributor.authorXing, SA-
dc.date.accessioned2017-11-21T03:00:19Z-
dc.date.available2017-11-21T03:00:19Z-
dc.date.issued2017-
dc.identifier.citationNanoscience and Nanotechnology Letters, 2017, v. 9 n. 6, p. 880-884-
dc.identifier.urihttp://hdl.handle.net/10722/249305-
dc.languageeng-
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://www.aspbs.com/nnl/-
dc.relation.ispartofNanoscience and Nanotechnology Letters-
dc.titleFabrication and Modification of n-ZnO/p-GaN Heterojunction Light Emitting Diodes with White Light Emission Characteristics -
dc.typeArticle-
dc.identifier.emailSu, S: scsu@hku.hk-
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hk-
dc.identifier.emailAzad, F: azad@HKUCC-COM.hku.hk-
dc.identifier.authorityLing, FCC=rp00747-
dc.identifier.doi10.1166/nnl.2017.2414-
dc.identifier.hkuros283259-
dc.identifier.volume9-
dc.identifier.issue6-
dc.identifier.spage880-
dc.identifier.epage884-
dc.identifier.isiWOS:000412946700007-

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