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Article: Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

TitleLocal carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 23, article no. 232103, p. 1-5 How to Cite?
AbstractWe report on spatially resolved and time-resolved cathodoluminescence (CL) studies of the recombination mechanisms of InGaN/GaN quantum wells (QWs) grown by metal-organic vapour phase epitaxy on bulk m-plane Ammono GaN substrates. As a result of the 2° miscut of the GaN substrate, the sample surface exhibits step bunches, where semi-polar QWs with a higher indium concentration than the planar m-plane QWs form during the QW growth. Spatially resolved time-integrated CL maps under both continuous and pulsed excitation show a broad emission band originating from the m-plane QWs and a distinct low energy emission originating from the semi-polar QWs at the step bunches. High resolution time-resolved CL maps reveal that when the m-QWs are excited well away from the step bunches the emission from the m-plane QWs decays with a time constant of 350 ps, whereas the emission originating semi-polar QWs decays with a longer time constant of 489 ps. The time constant of the decay from the semi-polar QWs is longer due to the separation of the carrier wavefunctions caused by the electric field across the semi-polar QWs.
Persistent Identifierhttp://hdl.handle.net/10722/247452
ISSN
2017 Impact Factor: 3.495
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhu, T-
dc.contributor.authorGachet, D-
dc.contributor.authorTang, F-
dc.contributor.authorFu, WYG-
dc.contributor.authorOehler, F-
dc.contributor.authorKappers, MJ-
dc.contributor.authorDawson, P-
dc.contributor.authorHumphreys, CJ-
dc.contributor.authorOliver, R-
dc.date.accessioned2017-10-18T08:27:29Z-
dc.date.available2017-10-18T08:27:29Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 23, article no. 232103, p. 1-5-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247452-
dc.description.abstractWe report on spatially resolved and time-resolved cathodoluminescence (CL) studies of the recombination mechanisms of InGaN/GaN quantum wells (QWs) grown by metal-organic vapour phase epitaxy on bulk m-plane Ammono GaN substrates. As a result of the 2° miscut of the GaN substrate, the sample surface exhibits step bunches, where semi-polar QWs with a higher indium concentration than the planar m-plane QWs form during the QW growth. Spatially resolved time-integrated CL maps under both continuous and pulsed excitation show a broad emission band originating from the m-plane QWs and a distinct low energy emission originating from the semi-polar QWs at the step bunches. High resolution time-resolved CL maps reveal that when the m-QWs are excited well away from the step bunches the emission from the m-plane QWs decays with a time constant of 350 ps, whereas the emission originating semi-polar QWs decays with a longer time constant of 489 ps. The time constant of the decay from the semi-polar QWs is longer due to the separation of the carrier wavefunctions caused by the electric field across the semi-polar QWs.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 23, article no. 232103, p. 1-5 and may be found at https://doi.org/10.1063/1.4971366-
dc.titleLocal carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence-
dc.typeArticle-
dc.identifier.emailFu, WYG: wyfu@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4971366-
dc.identifier.hkuros282429-
dc.identifier.volume109-
dc.identifier.issue23-
dc.identifier.spagearticle no. 232103, p. 1-
dc.identifier.epagearticle no. 232103, p. 5-
dc.identifier.isiWOS:000390677700017-
dc.publisher.placeUnited States-

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