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- Publisher Website: 10.1038/srep45344
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- PMID: 28345612
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Article: Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification
Title | Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification |
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Authors | |
Issue Date | 2017 |
Publisher | Nature Publishing Group: Open Access Journals - Option C. The Journal's web site is located at http://www.nature.com/srep/index.html |
Citation | Scientific Reports, 2017, v. 7, article no. 45344 How to Cite? |
Abstract | Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices. |
Persistent Identifier | http://hdl.handle.net/10722/247451 |
ISSN | 2023 Impact Factor: 3.8 2023 SCImago Journal Rankings: 0.900 |
PubMed Central ID | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhu, T | - |
dc.contributor.author | Liu, Y | - |
dc.contributor.author | Ding, T | - |
dc.contributor.author | Fu, WY | - |
dc.contributor.author | Jarman, J | - |
dc.contributor.author | Ren, CX | - |
dc.contributor.author | Kumar, RV | - |
dc.contributor.author | Oliver, RA | - |
dc.date.accessioned | 2017-10-18T08:27:28Z | - |
dc.date.available | 2017-10-18T08:27:28Z | - |
dc.date.issued | 2017 | - |
dc.identifier.citation | Scientific Reports, 2017, v. 7, article no. 45344 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | http://hdl.handle.net/10722/247451 | - |
dc.description.abstract | Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices. For many device applications, it is highly desirable to achieve not only high reflectivity and low absorption, but also good conductivity to allow effective electrical injection of charges. Here, we demonstrate the wafer-scale fabrication of highly reflective and conductive non-polar gallium nitride (GaN) DBRs, consisting of perfectly lattice-matched non-polar (11–20) GaN and mesoporous GaN layers that are obtained by a facile one-step electrochemical etching method without any extra processing steps. The GaN/mesoporous GaN DBRs exhibit high peak reflectivities (>96%) across the entire visible spectrum and wide spectral stop-band widths (full-width at half-maximum >80 nm), while preserving the material quality and showing good electrical conductivity. Such mesoporous GaN DBRs thus provide a promising and scalable platform for high performance GaN-based optoelectronic, photonic, and quantum photonic devices. | - |
dc.language | eng | - |
dc.publisher | Nature Publishing Group: Open Access Journals - Option C. The Journal's web site is located at http://www.nature.com/srep/index.html | - |
dc.relation.ispartof | Scientific Reports | - |
dc.rights | This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License. | - |
dc.title | Wafer-scale Fabrication of Non-Polar Mesoporous GaN Distributed Bragg Reflectors via Electrochemical Porosification | - |
dc.type | Article | - |
dc.identifier.email | Fu, WYG: wyfu@hku.hk | - |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1038/srep45344 | - |
dc.identifier.pmid | 28345612 | - |
dc.identifier.pmcid | PMC5366952 | - |
dc.identifier.scopus | eid_2-s2.0-85016332727 | - |
dc.identifier.hkuros | 282426 | - |
dc.identifier.volume | 7 | - |
dc.identifier.spage | article no. 45344 | - |
dc.identifier.epage | article no. 45344 | - |
dc.identifier.isi | WOS:000397399200001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 2045-2322 | - |