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Conference Paper: New concept to break the intrinsic properties of organic semiconductors for optical sensing applications

TitleNew concept to break the intrinsic properties of organic semiconductors for optical sensing applications
Authors
Issue Date2015
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
SPIE Optics + Photonics 2015, San Diego, California, USA, 9–13 August 2015. In SPIE - International Society for Optical Engineering. Proceedings, 2015, v. 9608, Article no. 96081A How to Cite?
AbstractThe space charge limit (SCL) effect is a universal phenomenon in semiconductor devices involving light emitting diodes, solar cells, and photodetectors. Typically, the SCL will exist in the condition of (1) unbalanced hole and electron mobility; (2) thick active layer; (3) high light intensity or dense photocarriers (electrons and holes) generation; and (4) moderate reverse bias. Through the study of plasmonic organic solar cells, we will show metallic nanostructures go beyond their optical functions to control recombination, transport, and collection of photocarriers generated from active organic materials. Through spatially redistributing light absorption at the active layer, the proposed plasmonic-electrical concept is fundamentally different from the hot carrier effect where photocarriers are generated from metallic nanostructures. The new plasmonic-electrical effect not only lays a physical foundation but also upgrades electrical properties for semiconductor devices [1]. We will also design different device structures to investigate and demonstrated how plasmonic-electrical [2] and plasmonic-optical [3] effects can be used to enhance device performances such as improving the light absorption of solar cells, increasing emission efficiency of light emitting devices, reducing dark current and enhancing sensitivity of photodetector as well as intensifying the surface enhanced Raman scattering for biosensor applications. Besides the optical (plasmonic) resonances from metal nanostructure, we will also use metal nanostructures to demonstrate electrical resonance which can be used for bistable and memory devices [4]. Consequently, exploiting both plasmonic-optical and plasmonic-electrical effects via metallic nanostructures will open up a more flexible and integrated way to design high-performance optoelectronic nanodevices. [1] W.E.I. Sha, X. Li, W.C.H. Choy, Scientific Reports, vol. 4, p. 6236 (10pp), 2014. [2] F.X. Xie, W.C.H. Choy, W.E.I. Sha, D. Zhang, S. Zhang, X. Li, C.W. Leung, J. Hou, Energy Environ. Sci., vol. 6, pp.3372 – 3379, 2013; D. Zhang, W.C.H. Choy, F. Xie, W.E.I. Sha, X. Li, B. Ding, K. Zhang, F. Huang, and Y. Cao, Adv. Funct. Mat., vol. 23, pp.4255–4261, 2013; D.D.S. Fung, L. Qiao, W.C.H. Choy, C.C.D. Wang, W.E.I. Sha, F. Xie, and S. He, J. Mater. Chem., vol. 21, pp. 16349 – 16356, 2011. [3] X.H. Li, W.C. H. Choy, X. Ren, D. Zhang, H.F. Lu, Adv. Funct. Mat. DOI: 10.1002/adfm.201303384; X.H.Li, W.C.H.Choy, H.F. Lu, W.E.I. Sha, and H. P. Ho, Adv. Funct. Mat., vol.23, pp.2728–2735, 2013; X.H. Li, W. C.H. Choy, L Huo, F.X. Xie, W.E.I. Sha, B. Ding, X. Guo, Y. Li, J. Hou, J. You, Y. Yang, Adv. Mater. vol. 24, pp.3046-3052, 2012; X.H. Li, W. E.I. Sha, W.C.H. Choy, D.D.S. Fung, F. X. Xie, J. of Phys. Chem. C, vol. 116, pp.7200-7206, 2012; C.C.D. Wang, W. C. H. Choy, C. Duan, D.D.S. Fung, W.E.I. Sha, F.X. Xie, F. Huang, and Y. Cao, J. Mater. Chem., vol. 22, pp.1206–1211, 2012. [4] T.H. Zheng, W.C.H. Choy, and Y.X. Sun, vol. 19, pp.2648-2653, 2009; T.H. Zheng, W.C.H. Choy, and Y.X. Sun, Appl. Phys. Lett, vol. 94, 123303 (pp.3), 2009.
DescriptionInvited paper - Session 9: Radiation-to-Current Transducers: Engineering Materials to Increase Current Generation - no. 9608-44
Persistent Identifierhttp://hdl.handle.net/10722/238182
ISSN
2023 SCImago Journal Rankings: 0.152
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChoy, WCH-
dc.date.accessioned2017-02-03T10:14:49Z-
dc.date.available2017-02-03T10:14:49Z-
dc.date.issued2015-
dc.identifier.citationSPIE Optics + Photonics 2015, San Diego, California, USA, 9–13 August 2015. In SPIE - International Society for Optical Engineering. Proceedings, 2015, v. 9608, Article no. 96081A-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/238182-
dc.descriptionInvited paper - Session 9: Radiation-to-Current Transducers: Engineering Materials to Increase Current Generation - no. 9608-44-
dc.description.abstractThe space charge limit (SCL) effect is a universal phenomenon in semiconductor devices involving light emitting diodes, solar cells, and photodetectors. Typically, the SCL will exist in the condition of (1) unbalanced hole and electron mobility; (2) thick active layer; (3) high light intensity or dense photocarriers (electrons and holes) generation; and (4) moderate reverse bias. Through the study of plasmonic organic solar cells, we will show metallic nanostructures go beyond their optical functions to control recombination, transport, and collection of photocarriers generated from active organic materials. Through spatially redistributing light absorption at the active layer, the proposed plasmonic-electrical concept is fundamentally different from the hot carrier effect where photocarriers are generated from metallic nanostructures. The new plasmonic-electrical effect not only lays a physical foundation but also upgrades electrical properties for semiconductor devices [1]. We will also design different device structures to investigate and demonstrated how plasmonic-electrical [2] and plasmonic-optical [3] effects can be used to enhance device performances such as improving the light absorption of solar cells, increasing emission efficiency of light emitting devices, reducing dark current and enhancing sensitivity of photodetector as well as intensifying the surface enhanced Raman scattering for biosensor applications. Besides the optical (plasmonic) resonances from metal nanostructure, we will also use metal nanostructures to demonstrate electrical resonance which can be used for bistable and memory devices [4]. Consequently, exploiting both plasmonic-optical and plasmonic-electrical effects via metallic nanostructures will open up a more flexible and integrated way to design high-performance optoelectronic nanodevices. [1] W.E.I. Sha, X. Li, W.C.H. Choy, Scientific Reports, vol. 4, p. 6236 (10pp), 2014. [2] F.X. Xie, W.C.H. Choy, W.E.I. Sha, D. Zhang, S. Zhang, X. Li, C.W. Leung, J. Hou, Energy Environ. Sci., vol. 6, pp.3372 – 3379, 2013; D. Zhang, W.C.H. Choy, F. Xie, W.E.I. Sha, X. Li, B. Ding, K. Zhang, F. Huang, and Y. Cao, Adv. Funct. Mat., vol. 23, pp.4255–4261, 2013; D.D.S. Fung, L. Qiao, W.C.H. Choy, C.C.D. Wang, W.E.I. Sha, F. Xie, and S. He, J. Mater. Chem., vol. 21, pp. 16349 – 16356, 2011. [3] X.H. Li, W.C. H. Choy, X. Ren, D. Zhang, H.F. Lu, Adv. Funct. Mat. DOI: 10.1002/adfm.201303384; X.H.Li, W.C.H.Choy, H.F. Lu, W.E.I. Sha, and H. P. Ho, Adv. Funct. Mat., vol.23, pp.2728–2735, 2013; X.H. Li, W. C.H. Choy, L Huo, F.X. Xie, W.E.I. Sha, B. Ding, X. Guo, Y. Li, J. Hou, J. You, Y. Yang, Adv. Mater. vol. 24, pp.3046-3052, 2012; X.H. Li, W. E.I. Sha, W.C.H. Choy, D.D.S. Fung, F. X. Xie, J. of Phys. Chem. C, vol. 116, pp.7200-7206, 2012; C.C.D. Wang, W. C. H. Choy, C. Duan, D.D.S. Fung, W.E.I. Sha, F.X. Xie, F. Huang, and Y. Cao, J. Mater. Chem., vol. 22, pp.1206–1211, 2012. [4] T.H. Zheng, W.C.H. Choy, and Y.X. Sun, vol. 19, pp.2648-2653, 2009; T.H. Zheng, W.C.H. Choy, and Y.X. Sun, Appl. Phys. Lett, vol. 94, 123303 (pp.3), 2009.-
dc.languageeng-
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofSPIE - International Society for Optical Engineering. Proceedings-
dc.rightsCopyright 2015 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2187190-
dc.titleNew concept to break the intrinsic properties of organic semiconductors for optical sensing applications-
dc.typeConference_Paper-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2187190-
dc.identifier.scopuseid_2-s2.0-84960533365-
dc.identifier.hkuros261496-
dc.identifier.volume9608-
dc.identifier.isiWOS:000365985000032-
dc.publisher.placeUnited States-
dc.identifier.issnl0277-786X-

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