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Article: Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor

TitleComparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor
Authors
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2016, v. 63, p. 1928-1933 How to Cite?
AbstractAn amorphous InGaZnO thin-film transistor with high-k Nb2O5 as gate dielectric is prepared for the first time, showing typical field-effect characteristics with a saturation mobility of 2.3 cm2V-1s-1. By adding La in the Nb2O5 gate dielectric, the electrical performance of the device is significantly improved, because La incorporation can decrease the Nb2O5/InGaZnO interface roughness and passivate the defect states at/near the interface. Consequently, the sample with appropriate La content has a high saturation mobility of 28 cm2V-1s-1, a low threshold voltage of 1.84 V, a small subthreshold swing of 0.17 V/decade, and negligible hysteresis. However, the electrical performance of the sample with pure La2O3 as gate dielectric is inferior due to the hygroscopic nature of the La2O3 film, resulting in a rougher gate-dielectric/InGaZnO interface.
Persistent Identifierhttp://hdl.handle.net/10722/234057
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorSong, J-
dc.contributor.authorHan, C-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:47Z-
dc.date.available2016-10-14T06:58:47Z-
dc.date.issued2016-
dc.identifier.citationIEEE Transactions on Electron Devices, 2016, v. 63, p. 1928-1933-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/234057-
dc.description.abstractAn amorphous InGaZnO thin-film transistor with high-k Nb2O5 as gate dielectric is prepared for the first time, showing typical field-effect characteristics with a saturation mobility of 2.3 cm2V-1s-1. By adding La in the Nb2O5 gate dielectric, the electrical performance of the device is significantly improved, because La incorporation can decrease the Nb2O5/InGaZnO interface roughness and passivate the defect states at/near the interface. Consequently, the sample with appropriate La content has a high saturation mobility of 28 cm2V-1s-1, a low threshold voltage of 1.84 V, a small subthreshold swing of 0.17 V/decade, and negligible hysteresis. However, the electrical performance of the sample with pure La2O3 as gate dielectric is inferior due to the hygroscopic nature of the La2O3 film, resulting in a rougher gate-dielectric/InGaZnO interface.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. -
dc.titleComparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor -
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2016.2544439-
dc.identifier.hkuros267835-
dc.identifier.volume63-
dc.identifier.spage1928-
dc.identifier.epage1933-
dc.publisher.placeUnited States-

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