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Article: Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

TitleNb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications
Authors
Issue Date2015
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2015, v. 107, p. article no. 163501 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/234054
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorSHI, R-
dc.contributor.authorHUANG, X-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:46Z-
dc.date.available2016-10-14T06:58:46Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107, p. article no. 163501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/234054-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2015, v. 107, article no. 163501) and may be found at (http://dx.doi.org/10.1063/1.4934183).-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleNb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4934183-
dc.identifier.hkuros267827-
dc.identifier.volume107-
dc.identifier.spagearticle no. 163501-
dc.identifier.epagearticle no. 163501-
dc.publisher.placeUnited States-

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