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Article: A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

TitleA Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor
Authors
Issue Date2015
Citation
IEEE Transactions on Electron Devices, 2015, v. 62, p. 2313-2319 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/234031

 

DC FieldValueLanguage
dc.contributor.authorHAN, C-
dc.contributor.authorTang, WM-
dc.contributor.authorLeung, CH-
dc.contributor.authorChe, CM-
dc.contributor.authorLai, PT-
dc.date.accessioned2016-10-14T06:58:36Z-
dc.date.available2016-10-14T06:58:36Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62, p. 2313-2319-
dc.identifier.urihttp://hdl.handle.net/10722/234031-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.titleA Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor-
dc.typeArticle-
dc.identifier.emailChe, CM: chemhead@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityChe, CM=rp00670-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2015.2432080-
dc.identifier.hkuros267796-
dc.identifier.volume62-
dc.identifier.spage2313-
dc.identifier.epage2319-

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