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Conference Paper: Incorporating photomask shape uncertainty in computational lithography

TitleIncorporating photomask shape uncertainty in computational lithography
Authors
KeywordsComputational lithography
Inverse lithography
Random field
Shape uncertainty
Issue Date2016
PublisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2
Citation
Optical Microlithography XXIX, San Jose, CA., 23-25 February 2016. In Conference Proceedings, 2016, v. 9780, p. 97800Q:1-97800Q:10 How to Cite?
AbstractThe lithographic performance of a photomask is sensitive to shape uncertainty caused by manufacturing and measurement errors. This work proposes incorporating the photomask shape uncertainty in computational lithography such as inverse lithography. The shape uncertainty of the photomask is quantitatively modeled as a random ?eld in a level-set method framework. With this, the shape uncertainty can be characterized by several parameters, making it computationally tractable to be incorporated in inverse lithography technique (ILT). Simulations are conducted to show the e€ectiveness of using this method to represent various kinds of shape variations. It is also demonstrated that incorporating the shape variation in ILT can reduce the mask error enhancement factor (MEEF) values of the optimized patterns, and improve the robustness of imaging performance against mask shape ?uctuation. © 2016 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/232286
ISBN
ISSN

 

DC FieldValueLanguage
dc.contributor.authorWu, X-
dc.contributor.authorLiu, S-
dc.contributor.authorErdmann, A-
dc.contributor.authorLam, EYM-
dc.date.accessioned2016-09-20T05:28:58Z-
dc.date.available2016-09-20T05:28:58Z-
dc.date.issued2016-
dc.identifier.citationOptical Microlithography XXIX, San Jose, CA., 23-25 February 2016. In Conference Proceedings, 2016, v. 9780, p. 97800Q:1-97800Q:10-
dc.identifier.isbn978-151060015-7-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/232286-
dc.description.abstractThe lithographic performance of a photomask is sensitive to shape uncertainty caused by manufacturing and measurement errors. This work proposes incorporating the photomask shape uncertainty in computational lithography such as inverse lithography. The shape uncertainty of the photomask is quantitatively modeled as a random ?eld in a level-set method framework. With this, the shape uncertainty can be characterized by several parameters, making it computationally tractable to be incorporated in inverse lithography technique (ILT). Simulations are conducted to show the e€ectiveness of using this method to represent various kinds of shape variations. It is also demonstrated that incorporating the shape variation in ILT can reduce the mask error enhancement factor (MEEF) values of the optimized patterns, and improve the robustness of imaging performance against mask shape ?uctuation. © 2016 SPIE.-
dc.languageeng-
dc.publisherSPIE - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml?WT.svl=mddp2-
dc.relation.ispartofSPIE - International Society for Optical Engineering Proceedings-
dc.rightsSPIE - International Society for Optical Engineering Proceedings. Copyright © SPIE - International Society for Optical Engineering.-
dc.rightsCopyright 2016. Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectComputational lithography-
dc.subjectInverse lithography-
dc.subjectRandom field-
dc.subjectShape uncertainty-
dc.titleIncorporating photomask shape uncertainty in computational lithography-
dc.typeConference_Paper-
dc.identifier.emailLam, EYM: elam@eee.hku.hk-
dc.identifier.authorityLam, EYM=rp00131-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2220278-
dc.identifier.scopuseid_2-s2.0-84987837616-
dc.identifier.hkuros264176-
dc.identifier.volume9780-
dc.identifier.spage97800Q:1-
dc.identifier.epage97800Q:10-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 161111-

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