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Article: The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

TitleThe contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs
Authors
Issue Date2016
PublisherIOP Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science and Technology, 2016, v. 31 n. 6, p. 065021:1-5 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/227399

 

DC FieldValueLanguage
dc.contributor.authorZhai, Z-
dc.contributor.authorYu, H-
dc.contributor.authorZuo, F-
dc.contributor.authorGuo, C-
dc.contributor.authorChen, G-
dc.contributor.authorZhang, F-
dc.contributor.authorWu, X-
dc.contributor.authorGao, J-
dc.date.accessioned2016-07-18T09:10:15Z-
dc.date.available2016-07-18T09:10:15Z-
dc.date.issued2016-
dc.identifier.citationSemiconductor Science and Technology, 2016, v. 31 n. 6, p. 065021:1-5-
dc.identifier.urihttp://hdl.handle.net/10722/227399-
dc.languageeng-
dc.publisherIOP Publishing. The Journal's web site is located at http://www.iop.org/journals/sst-
dc.relation.ispartofSemiconductor Science and Technology-
dc.titleThe contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs-
dc.typeArticle-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.identifier.doi10.1088/0268-1242/31/6/065021-
dc.identifier.hkuros258844-
dc.identifier.volume31-
dc.identifier.issue6-
dc.identifier.spage065021:1-
dc.identifier.epage5-

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