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Conference Paper: Van Der Waals Epitaxy Of Bi2se3 On Si(111) Vicinal Surfaces: An Approach To Achieving High Quality Topological Insulator Thin Films

TitleVan Der Waals Epitaxy Of Bi2se3 On Si(111) Vicinal Surfaces: An Approach To Achieving High Quality Topological Insulator Thin Films
Authors
Xie, MH
Issue Date2010
PublisherState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences.
Citation
16th International Conference On Superlattices, Nanostructures And Nanodevices (ICSNN-2010), Beijing, China, 18-23 July 2010 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/227000

 

DC FieldValueLanguage
dc.contributor.authorXie, MH-
dc.date.accessioned2016-07-14T03:37:10Z-
dc.date.available2016-07-14T03:37:10Z-
dc.date.issued2010-
dc.identifier.citation16th International Conference On Superlattices, Nanostructures And Nanodevices (ICSNN-2010), Beijing, China, 18-23 July 2010-
dc.identifier.urihttp://hdl.handle.net/10722/227000-
dc.languageeng-
dc.publisherState Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences. -
dc.relation.ispartofInternational Conference On Superlattices, Nanostructures And Nanodevices (ICSNN)-
dc.titleVan Der Waals Epitaxy Of Bi2se3 On Si(111) Vicinal Surfaces: An Approach To Achieving High Quality Topological Insulator Thin Films-
dc.typeConference_Paper-
dc.identifier.emailXie, MH: mhxie@hkusua.hku.hk-
dc.identifier.authorityXie, MH=rp00818-
dc.identifier.hkuros176885-
dc.publisher.placeBeijing, China-

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