File Download

Conference Paper: Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays

TitleOptical characteristics of GAN/SI micro-pixel light-emitting diode arrays
Authors
Issue Date2015
Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing China, 30 August-4 September 2015. How to Cite?
AbstractTwo-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ...
Persistent Identifierhttp://hdl.handle.net/10722/226473

 

DC FieldValueLanguage
dc.contributor.authorCheung, WS-
dc.contributor.authorLi, KH-
dc.contributor.authorTang, CW-
dc.contributor.authorZhao, C-
dc.contributor.authorLau, KM-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-06-17T07:44:22Z-
dc.date.available2016-06-17T07:44:22Z-
dc.date.issued2015-
dc.identifier.citationThe 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing China, 30 August-4 September 2015.-
dc.identifier.urihttp://hdl.handle.net/10722/226473-
dc.description.abstractTwo-dimensional arrays of emissive micro-light-emitting diodes (μ-LEDS) have been developed for a variety of applications such as high resolution micro-displays, maskless photo-lithography and multichannel visible-light optical communications amongst others. μ-LEDs have traditionally been fabricated on InGaN LED wafers grown on transparent sapphire substrates, and have suffered from optical crosstalk issues. When a single pixel is addressed, adjacent pixels and regions appear illuminated simultaneously. Such problems could result in functional failure in high-density μ-LED applications, including reduced resolution of micro-display and decreased signal-to-noise ratio in ...-
dc.languageeng-
dc.relation.ispartofInternational Conference on Nitride Semiconductors, ICNS-11-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleOptical characteristics of GAN/SI micro-pixel light-emitting diode arrays-
dc.typeConference_Paper-
dc.identifier.emailLi, KH: khei@eee.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityLi, KH=rp02142-
dc.identifier.authorityChoi, HW=rp00108-
dc.description.naturepostprint-
dc.identifier.hkuros258478-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats