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Article: Improved light outcoupling for phosphorescent top-emitting organic light-emitting devices

TitleImproved light outcoupling for phosphorescent top-emitting organic light-emitting devices
Authors
Issue Date2006
Citation
Applied Physics Letters, 2006, v. 88, n. 15 How to Cite?
AbstractLight outcoupling for top-emitting organic light-emitting devices is improved by using a semitransparent multilayer cathode structure of Al(2.5 nm)Ag(0.5 nm)Al(1 nm)Ag(0.5 nm) Al(0.5 nm)Ag(11 nm). In addition, an excellent transparency of 70% is achieved with a 78-nm-thick tris-(8-hydroxyquinoline) aluminum (Alq3) film as a top-capping layer, which is overlaid onto the cathode. The electroluminescence intensity with this Alq3 -covered cathode is increased by a factor of 1.9∼3.1 (applied voltage from 7 to 21 V) compared with the conventional cathode Al(4 nm)Ag(12 nm). This enhancement can be attributed to a gradual change of index refraction and extinction coefficient in the multilayer cathode (actually, not multilayer AlAg, but an Al:Ag alloylike configuration) and to the reduction of top Ag reflection by overlaying an Alq3 -capping layer onto the cathode. Besides, photoluminescence of the top-capping Alq3 layer is helpful to improve device luminance. © 2006 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/225872
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorChen, Shufen-
dc.contributor.authorZhao, Yi-
dc.contributor.authorCheng, Gang-
dc.contributor.authorLi, Jiang-
dc.contributor.authorLiu, Chunli-
dc.contributor.authorZhao, Zhenyuan-
dc.contributor.authorJie, Zhonghai-
dc.contributor.authorLiu, Shiyong-
dc.date.accessioned2016-05-23T02:22:00Z-
dc.date.available2016-05-23T02:22:00Z-
dc.date.issued2006-
dc.identifier.citationApplied Physics Letters, 2006, v. 88, n. 15-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/225872-
dc.description.abstractLight outcoupling for top-emitting organic light-emitting devices is improved by using a semitransparent multilayer cathode structure of Al(2.5 nm)Ag(0.5 nm)Al(1 nm)Ag(0.5 nm) Al(0.5 nm)Ag(11 nm). In addition, an excellent transparency of 70% is achieved with a 78-nm-thick tris-(8-hydroxyquinoline) aluminum (Alq3) film as a top-capping layer, which is overlaid onto the cathode. The electroluminescence intensity with this Alq3 -covered cathode is increased by a factor of 1.9∼3.1 (applied voltage from 7 to 21 V) compared with the conventional cathode Al(4 nm)Ag(12 nm). This enhancement can be attributed to a gradual change of index refraction and extinction coefficient in the multilayer cathode (actually, not multilayer AlAg, but an Al:Ag alloylike configuration) and to the reduction of top Ag reflection by overlaying an Alq3 -capping layer onto the cathode. Besides, photoluminescence of the top-capping Alq3 layer is helpful to improve device luminance. © 2006 American Institute of Physics.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleImproved light outcoupling for phosphorescent top-emitting organic light-emitting devices-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2190274-
dc.identifier.scopuseid_2-s2.0-33646135067-
dc.identifier.volume88-
dc.identifier.issue15-

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