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Article: Confocal microscopic analysis of optical crosstalk in GaN micro-pixel light-emitting diodes

TitleConfocal microscopic analysis of optical crosstalk in GaN micro-pixel light-emitting diodes
Authors
Issue Date2015
Citation
Applied Physics Letters, 2015, v. 107, n. 17, article no. 171103 How to Cite?
Abstract© 2015 AIP Publishing LLC. The optical crosstalk phenomenon in GaN micro-pixel light-emitting diodes (LED) has been investigated by confocal microscopy. Depth-resolved confocal emission images indicate light channeling along the GaN and sapphire layers as the source of crosstalk. Thin-film micro-pixel devices are proposed, whereby the light-trapping sapphire layers are removed by laser lift-off. Optical crosstalk is significantly reduced but not eliminated due to the remaining GaN layer. Another design involving micro-pixels which are completely isolated is further proposed; such devices exhibited low-noise and enhanced optical performances, which are important attributes for high-density micro-pixel LED applications including micro-displays and multi-channel optical communications.
Persistent Identifierhttp://hdl.handle.net/10722/225091
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105

 

DC FieldValueLanguage
dc.contributor.authorLi, K. H.-
dc.contributor.authorCheung, Y. F.-
dc.contributor.authorCheung, W. S.-
dc.contributor.authorChoi, H. W.-
dc.date.accessioned2016-04-18T11:16:45Z-
dc.date.available2016-04-18T11:16:45Z-
dc.date.issued2015-
dc.identifier.citationApplied Physics Letters, 2015, v. 107, n. 17, article no. 171103-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/225091-
dc.description.abstract© 2015 AIP Publishing LLC. The optical crosstalk phenomenon in GaN micro-pixel light-emitting diodes (LED) has been investigated by confocal microscopy. Depth-resolved confocal emission images indicate light channeling along the GaN and sapphire layers as the source of crosstalk. Thin-film micro-pixel devices are proposed, whereby the light-trapping sapphire layers are removed by laser lift-off. Optical crosstalk is significantly reduced but not eliminated due to the remaining GaN layer. Another design involving micro-pixels which are completely isolated is further proposed; such devices exhibited low-noise and enhanced optical performances, which are important attributes for high-density micro-pixel LED applications including micro-displays and multi-channel optical communications.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleConfocal microscopic analysis of optical crosstalk in GaN micro-pixel light-emitting diodes-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4934840-
dc.identifier.scopuseid_2-s2.0-84945933472-
dc.identifier.hkuros263400-
dc.identifier.volume107-
dc.identifier.issue17-
dc.identifier.spagearticle no. 171103-
dc.identifier.epagearticle no. 171103-

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