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Article: Tuning the resistive switching memory in a metal-ferroelectric-semiconductor capacitor by field effect structure

TitleTuning the resistive switching memory in a metal-ferroelectric-semiconductor capacitor by field effect structure
Authors
Issue Date2015
PublisherElsevier B.V. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2015, v. 356, p. 898-904 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/222485

 

DC FieldValueLanguage
dc.contributor.authorWang, SY-
dc.contributor.authorGuo, F-
dc.contributor.authorWang, X-
dc.contributor.authorLiu, WF-
dc.contributor.authorGao, J-
dc.date.accessioned2016-01-18T07:41:12Z-
dc.date.available2016-01-18T07:41:12Z-
dc.date.issued2015-
dc.identifier.citationApplied Surface Science, 2015, v. 356, p. 898-904-
dc.identifier.urihttp://hdl.handle.net/10722/222485-
dc.languageeng-
dc.publisherElsevier B.V. The Journal's web site is located at http://www.elsevier.com/locate/apsusc-
dc.relation.ispartofApplied Surface Science-
dc.titleTuning the resistive switching memory in a metal-ferroelectric-semiconductor capacitor by field effect structure-
dc.typeArticle-
dc.identifier.emailGao, J: jugao@hku.hk-
dc.identifier.authorityGao, J=rp00699-
dc.identifier.doi10.1016/j.apsusc.2015.08.049-
dc.identifier.hkuros256678-
dc.identifier.volume356-
dc.identifier.spage898-
dc.identifier.epage904-

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