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Article: Valley excitons in two-dimensional semiconductors
Title | Valley excitons in two-dimensional semiconductors |
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Authors | |
Keywords | Exciton Two-dimensional semiconductor Valley physics Transition metal dichalcogenides |
Issue Date | 2015 |
Citation | National Science Review, 2015, v. 2, n. 1, p. 57-70 How to Cite? |
Abstract | Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom. |
Persistent Identifier | http://hdl.handle.net/10722/222182 |
ISSN | 2023 Impact Factor: 16.3 2023 SCImago Journal Rankings: 2.934 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Yu, Hongyi | - |
dc.contributor.author | Cui, Xiaodong | - |
dc.contributor.author | Xu, Xiaodong | - |
dc.contributor.author | Yao, Wang | - |
dc.date.accessioned | 2015-12-21T06:49:12Z | - |
dc.date.available | 2015-12-21T06:49:12Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | National Science Review, 2015, v. 2, n. 1, p. 57-70 | - |
dc.identifier.issn | 2095-5138 | - |
dc.identifier.uri | http://hdl.handle.net/10722/222182 | - |
dc.description.abstract | Monolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom. | - |
dc.language | eng | - |
dc.relation.ispartof | National Science Review | - |
dc.subject | Exciton | - |
dc.subject | Two-dimensional semiconductor | - |
dc.subject | Valley physics | - |
dc.subject | Transition metal dichalcogenides | - |
dc.title | Valley excitons in two-dimensional semiconductors | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1093/nsr/nwu078 | - |
dc.identifier.scopus | eid_2-s2.0-84941130584 | - |
dc.identifier.hkuros | 242690 | - |
dc.identifier.volume | 2 | - |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 57 | - |
dc.identifier.epage | 70 | - |
dc.identifier.eissn | 2053-714X | - |
dc.identifier.isi | WOS:000356860400015 | - |
dc.identifier.issnl | 2053-714X | - |