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Article: Valley excitons in two-dimensional semiconductors

TitleValley excitons in two-dimensional semiconductors
Authors
KeywordsExciton
Two-dimensional semiconductor
Valley physics
Transition metal dichalcogenides
Issue Date2015
Citation
National Science Review, 2015, v. 2, n. 1, p. 57-70 How to Cite?
AbstractMonolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.
Persistent Identifierhttp://hdl.handle.net/10722/222182
ISSN
2015 Impact Factor: 8.0

 

DC FieldValueLanguage
dc.contributor.authorYu, Hongyi-
dc.contributor.authorCui, Xiaodong-
dc.contributor.authorXu, Xiaodong-
dc.contributor.authorYao, Wang-
dc.date.accessioned2015-12-21T06:49:12Z-
dc.date.available2015-12-21T06:49:12Z-
dc.date.issued2015-
dc.identifier.citationNational Science Review, 2015, v. 2, n. 1, p. 57-70-
dc.identifier.issn2095-5138-
dc.identifier.urihttp://hdl.handle.net/10722/222182-
dc.description.abstractMonolayer group-VIB transition-metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibit remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges and the valley-dependent optical selection rules for interband transitions. Here, we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition-metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.-
dc.languageeng-
dc.relation.ispartofNational Science Review-
dc.subjectExciton-
dc.subjectTwo-dimensional semiconductor-
dc.subjectValley physics-
dc.subjectTransition metal dichalcogenides-
dc.titleValley excitons in two-dimensional semiconductors-
dc.typeArticle-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1093/nsr/nwu078-
dc.identifier.scopuseid_2-s2.0-84941130584-
dc.identifier.hkuros242690-
dc.identifier.volume2-
dc.identifier.issue1-
dc.identifier.spage57-
dc.identifier.epage70-
dc.identifier.eissn2053-714X-

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