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Article: A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit

TitleA Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
Authors
Keywordsorientation dependence
MoS 2
Field effect transistor
Issue Date2015
PublisherIEEE Electron Devices Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2015, v. 36, n. 10, p. 1091-1093 How to Cite?
Abstract© 2015 IEEE.Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to subband transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths.
Persistent Identifierhttp://hdl.handle.net/10722/221911
ISSN
2015 Impact Factor: 2.528
2015 SCImago Journal Rankings: 1.791

 

DC FieldValueLanguage
dc.contributor.authorLiu, F-
dc.contributor.authorWang, Y-
dc.contributor.authorLiu, X-
dc.contributor.authorWang, J-
dc.contributor.authorGuo, H-
dc.date.accessioned2015-12-21T05:47:22Z-
dc.date.available2015-12-21T05:47:22Z-
dc.date.issued2015-
dc.identifier.citationIEEE Electron Device Letters, 2015, v. 36, n. 10, p. 1091-1093-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/221911-
dc.description.abstract© 2015 IEEE.Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to subband transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths.-
dc.languageeng-
dc.publisherIEEE Electron Devices Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectorientation dependence-
dc.subjectMoS 2-
dc.subjectField effect transistor-
dc.titleA Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit-
dc.typeArticle-
dc.identifier.emailLiu, F: feiliu@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityWang, J=rp00799-
dc.identifier.doi10.1109/LED.2015.2472297-
dc.identifier.scopuseid_2-s2.0-84959451193-
dc.identifier.hkuros256501-
dc.identifier.volume36-
dc.identifier.issue10-
dc.identifier.spage1091-
dc.identifier.epage1093-

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