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- Publisher Website: 10.1109/LED.2015.2472297
- Scopus: eid_2-s2.0-84959451193
- WOS: WOS:000362288700032
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Article: A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit
Title | A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit |
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Authors | |
Keywords | orientation dependence MoS 2 Field effect transistor |
Issue Date | 2015 |
Publisher | IEEE Electron Devices Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2015, v. 36, n. 10, p. 1091-1093 How to Cite? |
Abstract | © 2015 IEEE.Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to subband transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths. |
Persistent Identifier | http://hdl.handle.net/10722/221911 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Liu, F | - |
dc.contributor.author | Wang, Y | - |
dc.contributor.author | Liu, X | - |
dc.contributor.author | Wang, J | - |
dc.contributor.author | Guo, H | - |
dc.date.accessioned | 2015-12-21T05:47:22Z | - |
dc.date.available | 2015-12-21T05:47:22Z | - |
dc.date.issued | 2015 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2015, v. 36, n. 10, p. 1091-1093 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221911 | - |
dc.description.abstract | © 2015 IEEE.Device performance of monolayer MoS2 transistors is investigated by atomistic simulations within the non-equilibrium Green's function formalism. A strong dependence of quantum transport on MoS2 orientation is predicted. To a large extent, the orientation dependence is due to subband transport properties and the atomistic structure along the transport direction. A bandgap is found in the conduction band along armchair direction (AD), which plays a major role for the orientation-dependent transport. At the same time, different atomic arrangements along AD and zigzag direction have different depletion region lengths, which also contribute to the orientation-dependent transport. Orientation dependence of drain current exists in MoS2 FETs having different gate lengths. | - |
dc.language | eng | - |
dc.publisher | IEEE Electron Devices Society. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.subject | orientation dependence | - |
dc.subject | MoS 2 | - |
dc.subject | Field effect transistor | - |
dc.title | A Theoretical Investigation of Orientation-Dependent Transport in Monolayer MoS2 Transistors at the Ballistic Limit | - |
dc.type | Article | - |
dc.identifier.email | Liu, F: feiliu@hku.hk | - |
dc.identifier.email | Wang, J: jianwang@hku.hk | - |
dc.identifier.authority | Wang, J=rp00799 | - |
dc.identifier.doi | 10.1109/LED.2015.2472297 | - |
dc.identifier.scopus | eid_2-s2.0-84959451193 | - |
dc.identifier.hkuros | 256501 | - |
dc.identifier.volume | 36 | - |
dc.identifier.issue | 10 | - |
dc.identifier.spage | 1091 | - |
dc.identifier.epage | 1093 | - |
dc.identifier.isi | WOS:000362288700032 | - |
dc.identifier.issnl | 0741-3106 | - |