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Article: Atomic level modeling of extremely thin silicon-on-insulator MOSFETs including the silicon dioxide: Electronic structure

TitleAtomic level modeling of extremely thin silicon-on-insulator MOSFETs including the silicon dioxide: Electronic structure
Authors
Keywordsband structure
Atomistic modeling
Silicon on insulator (SOI).
oxide interface
density-functional tight binding (DFTB)
Issue Date2015
Citation
IEEE Transactions on Electron Devices, 2015, v. 62, n. 3, p. 696-704 How to Cite?
Abstract© 1963-2012 IEEE. Ultimate scaling of Si MOSFETs leads to extremely thin and short channels, which are justifiably modeled at the atomic level. Currently, hydrogen passivation of the channel is used in device models, as a compromise between efficiency and accuracy. This paper advances the state of the art by adopting a density-functional tight-binding Hamiltonian, permitting the inclusion of the confining amorphous oxide explicitly in the simulation domain in a way similar to ab initio approaches. Band structure of silicon-on-insulator films of different thicknesses is studied with this method, showing good agreement with the experiment and revealing large quantitative differences in comparison with simulations of H-passivated Si film.
Persistent Identifierhttp://hdl.handle.net/10722/221376
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436

 

DC FieldValueLanguage
dc.contributor.authorMarkov, Stanislav-
dc.contributor.authorAradi, Balint-
dc.contributor.authorYam, Chi Yung-
dc.contributor.authorXie, Hang-
dc.contributor.authorFrauenheim, Thomas-
dc.contributor.authorChen, Guanhua-
dc.date.accessioned2015-11-18T06:09:09Z-
dc.date.available2015-11-18T06:09:09Z-
dc.date.issued2015-
dc.identifier.citationIEEE Transactions on Electron Devices, 2015, v. 62, n. 3, p. 696-704-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/221376-
dc.description.abstract© 1963-2012 IEEE. Ultimate scaling of Si MOSFETs leads to extremely thin and short channels, which are justifiably modeled at the atomic level. Currently, hydrogen passivation of the channel is used in device models, as a compromise between efficiency and accuracy. This paper advances the state of the art by adopting a density-functional tight-binding Hamiltonian, permitting the inclusion of the confining amorphous oxide explicitly in the simulation domain in a way similar to ab initio approaches. Band structure of silicon-on-insulator films of different thicknesses is studied with this method, showing good agreement with the experiment and revealing large quantitative differences in comparison with simulations of H-passivated Si film.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2015 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subjectband structure-
dc.subjectAtomistic modeling-
dc.subjectSilicon on insulator (SOI).-
dc.subjectoxide interface-
dc.subjectdensity-functional tight binding (DFTB)-
dc.titleAtomic level modeling of extremely thin silicon-on-insulator MOSFETs including the silicon dioxide: Electronic structure-
dc.typeArticle-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2014.2387288-
dc.identifier.scopuseid_2-s2.0-84923915416-
dc.identifier.hkuros245830-
dc.identifier.volume62-
dc.identifier.issue3-
dc.identifier.spage696-
dc.identifier.epage704-

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