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Article: Nitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications

TitleNitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications
Authors
Issue Date2014
PublisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/
Citation
Applied Physics Express, 2014, v. 7, p. 061201 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/217028

 

DC FieldValueLanguage
dc.contributor.authorWang, LS-
dc.contributor.authorXu, J-
dc.contributor.authorLiu, L-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T05:46:27Z-
dc.date.available2015-09-18T05:46:27Z-
dc.date.issued2014-
dc.identifier.citationApplied Physics Express, 2014, v. 7, p. 061201-
dc.identifier.urihttp://hdl.handle.net/10722/217028-
dc.languageeng-
dc.publisherThe Japan Society of Applied Physics. The Journal's web site is located at http://apex.ipap.jp/-
dc.relation.ispartofApplied Physics Express-
dc.titleNitrided HfTiON/Ga2O3 (Gd2O3) as stacked gate dielectric for GaAs MOS applications -
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/APEX.7.061201-
dc.identifier.hkuros254202-
dc.identifier.volume7-
dc.identifier.spage061201-
dc.identifier.epage061201-

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