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Article: Over 1.1 eV Workfunction Tuning of Cesium Intercalated Metal Oxides for Functioning as Both Electron and Hole Transport Layers in Organic Optoelectronic Devices

TitleOver 1.1 eV Workfunction Tuning of Cesium Intercalated Metal Oxides for Functioning as Both Electron and Hole Transport Layers in Organic Optoelectronic Devices
Authors
Issue Date2014
Citation
Advanced Functional Materials, 2014, v. 24, p. 7348-7356 How to Cite?
AbstractIn this paper, over 1.1 eV continuous tuning of metal oxides workfunction is realized by cesium intercalation, making the metal oxide function as both electron transport layer and hole transport layer in organic optoelectronic devices. The demonstrated metal oxides are commonly used molybdenum oxide and vanadium oxide. The proposed approach of synthesizing cesium intercalated metal oxides has interesting properties of room-temperature, ambient atmosphere, water free and solution process, favoring the formation of metal oxides as carrier transport layers at different regions in multilayered devices and large scale fabrication of organic optoelectronics at low cost. Besides the wide range of controllable workfunction adjustment, band structures, and electrical properties are investigated in detail, to understand the effects of cesium intercalation on metal oxides. The device results show that, using the proposed cesium intercalation approach, each of the two investigated metal oxides can function as both ETL and HTL in organic solar cells and organic light emitting diodes with very good device performances. Consequently, with the interesting properties in film synthesis, the proposed cesium intercalated metal oxides can achieve continuously workfunction tuning over a large range and contribute to evolution of the simple route for fabricating high performance organic optoelectronic devices.
Persistent Identifierhttp://hdl.handle.net/10722/216958

 

DC FieldValueLanguage
dc.contributor.authorLi, X-
dc.contributor.authorXie, F-
dc.contributor.authorZHANG, S-
dc.contributor.authorHOU, J-
dc.contributor.authorChoy, WCH-
dc.date.accessioned2015-09-18T05:44:10Z-
dc.date.available2015-09-18T05:44:10Z-
dc.date.issued2014-
dc.identifier.citationAdvanced Functional Materials, 2014, v. 24, p. 7348-7356-
dc.identifier.urihttp://hdl.handle.net/10722/216958-
dc.description.abstractIn this paper, over 1.1 eV continuous tuning of metal oxides workfunction is realized by cesium intercalation, making the metal oxide function as both electron transport layer and hole transport layer in organic optoelectronic devices. The demonstrated metal oxides are commonly used molybdenum oxide and vanadium oxide. The proposed approach of synthesizing cesium intercalated metal oxides has interesting properties of room-temperature, ambient atmosphere, water free and solution process, favoring the formation of metal oxides as carrier transport layers at different regions in multilayered devices and large scale fabrication of organic optoelectronics at low cost. Besides the wide range of controllable workfunction adjustment, band structures, and electrical properties are investigated in detail, to understand the effects of cesium intercalation on metal oxides. The device results show that, using the proposed cesium intercalation approach, each of the two investigated metal oxides can function as both ETL and HTL in organic solar cells and organic light emitting diodes with very good device performances. Consequently, with the interesting properties in film synthesis, the proposed cesium intercalated metal oxides can achieve continuously workfunction tuning over a large range and contribute to evolution of the simple route for fabricating high performance organic optoelectronic devices.-
dc.languageeng-
dc.relation.ispartofAdvanced Functional Materials-
dc.titleOver 1.1 eV Workfunction Tuning of Cesium Intercalated Metal Oxides for Functioning as Both Electron and Hole Transport Layers in Organic Optoelectronic Devices-
dc.typeArticle-
dc.identifier.emailXie, F: fxxie@HKUCC-COM.hku.hk-
dc.identifier.emailChoy, WCH: chchoy@eee.hku.hk-
dc.identifier.authorityChoy, WCH=rp00218-
dc.identifier.doi10.1002/adfm.201401969-
dc.identifier.hkuros250903-
dc.identifier.volume24-
dc.identifier.spage7348-
dc.identifier.epage7356-

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