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Conference Paper: A chip-level transient electro-thermal field simulator with gate capacitance and matrix exponential

TitleA chip-level transient electro-thermal field simulator with gate capacitance and matrix exponential
Authors
Issue Date2014
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
The 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 October 2014. In Conference Proceedings, 2014, p. 1-4 How to Cite?
AbstractThis paper presents a new transient electro-thermal (ET) simulation method for fast 3D chip-level analysis of power electronics with field solver accuracy. The metallization stacks are meshed and solved with 3D field solver using nonlinear temperature-dependent electrical and thermal parameters, and the active transistors are modeled with compact models to avoid time-consuming TCAD simulation. Two new ingredients are introduced to further enhance physical relevance and computational performance: 1) Gate capacitance of power MOS is explicitly accounted for in the electrical subsystem to improve the modeling accuracy for power devices with large summed gate capacitance; 2) To address the considerably different time scales between electrical and thermal sectors, the electrical system is solved by the matrix exponential method (MEXP), which allows larger time step sizes without sacrificing accuracy and thus accelerates the ET coupled simulation. © 2014 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/216396
ISBN

 

DC FieldValueLanguage
dc.contributor.authorMei, Q-
dc.contributor.authorWong, N-
dc.contributor.authorChen, Q-
dc.date.accessioned2015-09-18T05:26:20Z-
dc.date.available2015-09-18T05:26:20Z-
dc.date.issued2014-
dc.identifier.citationThe 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2014), Guilin, China, 28-31 October 2014. In Conference Proceedings, 2014, p. 1-4-
dc.identifier.isbn978-1-4799-3282-5-
dc.identifier.urihttp://hdl.handle.net/10722/216396-
dc.description.abstractThis paper presents a new transient electro-thermal (ET) simulation method for fast 3D chip-level analysis of power electronics with field solver accuracy. The metallization stacks are meshed and solved with 3D field solver using nonlinear temperature-dependent electrical and thermal parameters, and the active transistors are modeled with compact models to avoid time-consuming TCAD simulation. Two new ingredients are introduced to further enhance physical relevance and computational performance: 1) Gate capacitance of power MOS is explicitly accounted for in the electrical subsystem to improve the modeling accuracy for power devices with large summed gate capacitance; 2) To address the considerably different time scales between electrical and thermal sectors, the electrical system is solved by the matrix exponential method (MEXP), which allows larger time step sizes without sacrificing accuracy and thus accelerates the ET coupled simulation. © 2014 IEEE.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedings-
dc.rightsInternational Conference on Solid-State and Integrated Circuit Technology Proceedings. Copyright © IEEE.-
dc.rights©2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleA chip-level transient electro-thermal field simulator with gate capacitance and matrix exponential-
dc.typeConference_Paper-
dc.identifier.emailWong, N: nwong@eee.hku.hk-
dc.identifier.emailChen, Q: q1chen@hku.hk-
dc.identifier.authorityWong, N=rp00190-
dc.identifier.authorityChen, Q=rp01688-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1109/ICSICT.2014.7021197-
dc.identifier.scopuseid_2-s2.0-84925308475-
dc.identifier.hkuros253338-
dc.identifier.spage1-
dc.identifier.epage4-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 151119-

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