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Article: High-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma

TitleHigh-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma
Authors
Issue Date2014
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270
Citation
Physica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870 How to Cite?
AbstractPentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times.
Persistent Identifierhttp://hdl.handle.net/10722/215133
ISSN
2015 Impact Factor: 2.578
2015 SCImago Journal Rankings: 1.243

 

DC FieldValueLanguage
dc.contributor.authorHan, CY-
dc.contributor.authorTang, WM-
dc.contributor.authorLeung, CH-
dc.contributor.authorChe, CM-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-08-21T13:15:19Z-
dc.date.available2015-08-21T13:15:19Z-
dc.date.issued2014-
dc.identifier.citationPhysica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://hdl.handle.net/10722/215133-
dc.description.abstractPentacene thin-film transistor with high-κ TaLaO as gate dielectric has been fabricated and shows a carrier mobility of 0.73 cm2/V s, much higher than that based on pure La2O3 (0.43 cm2/V s) due to the smoother surface of the TaLaO film and thus larger pentacene islands grown on it in the initial stage. Moreover, among various times for fluorine-plasma treatment on the TaLaO gate dielectric, 100 seconds result in the highest carrier mobility of 1.12 cm2/V s due to (1) smoothest oxide surface achieved by fluorine passivation of oxide traps, as measured by AFM and supported by smallest sub-threshold swing and lowest low-frequency noise; (2) the largest pentacene grains grown on the smoothest oxide surface, as demonstrated by AFM. Pentacene islands on on TaLaO or La2O3 gate dielectric with different plasma treatment times.-
dc.languageeng-
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1862-6270-
dc.relation.ispartofPhysica Status Solidi - Rapid Research Letters-
dc.rightsThis is the accepted version of the following article: Physica Status Solidi - Rapid Research Letters, 2014, v. 8 n. 10, p. 866-870, which has been published in final form at http://onlinelibrary.wiley.com/doi/10.1002/pssr.201409261/abstract-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleHigh-mobility pentacene OTFT with TaLaO gate dielectric passivated by fluorine plasma-
dc.typeArticle-
dc.identifier.emailLeung, CH: hreelch@HKUCC.hku.hk-
dc.identifier.emailChe, CM: cmche@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityChe, CM=rp00670-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1002/pssr.201409261-
dc.identifier.hkuros246793-
dc.identifier.volume8-
dc.identifier.issue10-
dc.identifier.spage866-
dc.identifier.epage870-
dc.publisher.placeGermany-

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