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Article: High-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric

TitleHigh-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric
Authors
Issue Date2014
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel
Citation
Organic Electronics, 2014, v. 15 n. 10, p. 2499-2504 How to Cite?
AbstractPentacene organic thin-film transistors (OTFTs) using LaxTa(1−x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm2 V−1s−1s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility.
Persistent Identifierhttp://hdl.handle.net/10722/215128
ISSN
2015 Impact Factor: 3.471
2015 SCImago Journal Rankings: 1.215

 

DC FieldValueLanguage
dc.contributor.authorHan, CY-
dc.contributor.authorTang, WM-
dc.contributor.authorLeung, CH-
dc.contributor.authorChe, CM-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-08-21T13:15:04Z-
dc.date.available2015-08-21T13:15:04Z-
dc.date.issued2014-
dc.identifier.citationOrganic Electronics, 2014, v. 15 n. 10, p. 2499-2504-
dc.identifier.issn1566-1199-
dc.identifier.urihttp://hdl.handle.net/10722/215128-
dc.description.abstractPentacene organic thin-film transistors (OTFTs) using LaxTa(1−x)Oy as gate dielectric with different La contents (x = 0.227, 0.562, 0.764, 0.883) have been fabricated and compared with those using Ta oxide or La oxide. The OTFT with La0.764Ta0.236Oy can achieve a carrier mobility of 1.21 cm2 V−1s−1s, which is about 40 times and two times higher than those of the devices using Ta oxide and La oxide, respectively. As supported by XPS, AFM and noise measurement, the reasons lie in that La incorporation can suppress the formation of oxygen vacancies in Ta oxide, and Ta content can alleviate the hygroscopicity of La oxide, resulting in more passivated and smoother dielectric surface and thus larger pentacene grains, which lead to higher carrier mobility.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/orgel-
dc.relation.ispartofOrganic Electronics-
dc.rightsPosting accepted manuscript (postprint): © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0/-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleHigh-mobility pentacene thin-film transistor by using LaxTa(1-x)Oy as gate dielectric-
dc.typeArticle-
dc.identifier.emailLeung, CH: hreelch@HKUCC.hku.hk-
dc.identifier.emailChe, CM: cmche@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLeung, CH=rp00146-
dc.identifier.authorityChe, CM=rp00670-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepostprint-
dc.identifier.doi10.1016/j.orgel.2014.07.016-
dc.identifier.hkuros246779-
dc.identifier.volume15-
dc.identifier.issue10-
dc.identifier.spage2499-
dc.identifier.epage2504-
dc.publisher.placeNetherlands-

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