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Book Chapter: Indium Antimonide (InSb) Nanowire-Based Photodetectors

TitleIndium Antimonide (InSb) Nanowire-Based Photodetectors
Authors
KeywordsFermi energy
Bohr radius
Band gap
Nanowire
Photodetector
Indium antimonide
Issue Date2012
Citation
Nano Optoelectronic Sensors and Devices, 2012, p. 209-224 How to Cite?
AbstractIn this chapter, a photodetector using a single indium antimonide (InSb) nanowire is shown to effectively detect infrared (IR) signals at room temperature. Indium antimonide nanowires with diameters of 10-35 nm and tens of microns long were grown by the vapor-liquid-solid approach using an InSb powder source and Au catalyst. The quantum confinement can modify the band gap energy when the diameter of the nanowires is smaller than the Bohr radius, making the fabrication of InSb photodetectors covering both near infra red and mid infra red in feasible. Both symmetric and asymmetric InSb nanowire photodetectors were fabricated and investigated under NIR and MIR irradiation. High quantum efficiency was observed for a 10-nm InSb nanowire photodetector at room temperature. The dark current of the nanowire detector was significantly reduced due to the nanoscale diameter of the wire and suppression of phonon scattering. © 2012 Elsevier Inc. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/213337

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorLai, King Wai Chiu-
dc.contributor.authorSun, Xuhui-
dc.contributor.authorXi, Ning-
dc.contributor.authorMeyyappan, Meyya-
dc.date.accessioned2015-07-28T04:06:56Z-
dc.date.available2015-07-28T04:06:56Z-
dc.date.issued2012-
dc.identifier.citationNano Optoelectronic Sensors and Devices, 2012, p. 209-224-
dc.identifier.urihttp://hdl.handle.net/10722/213337-
dc.description.abstractIn this chapter, a photodetector using a single indium antimonide (InSb) nanowire is shown to effectively detect infrared (IR) signals at room temperature. Indium antimonide nanowires with diameters of 10-35 nm and tens of microns long were grown by the vapor-liquid-solid approach using an InSb powder source and Au catalyst. The quantum confinement can modify the band gap energy when the diameter of the nanowires is smaller than the Bohr radius, making the fabrication of InSb photodetectors covering both near infra red and mid infra red in feasible. Both symmetric and asymmetric InSb nanowire photodetectors were fabricated and investigated under NIR and MIR irradiation. High quantum efficiency was observed for a 10-nm InSb nanowire photodetector at room temperature. The dark current of the nanowire detector was significantly reduced due to the nanoscale diameter of the wire and suppression of phonon scattering. © 2012 Elsevier Inc. All rights reserved.-
dc.languageeng-
dc.relation.ispartofNano Optoelectronic Sensors and Devices-
dc.subjectFermi energy-
dc.subjectBohr radius-
dc.subjectBand gap-
dc.subjectNanowire-
dc.subjectPhotodetector-
dc.subjectIndium antimonide-
dc.titleIndium Antimonide (InSb) Nanowire-Based Photodetectors-
dc.typeBook_Chapter-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1016/B978-1-4377-3471-3.00013-7-
dc.identifier.scopuseid_2-s2.0-84882480887-
dc.identifier.spage209-
dc.identifier.epage224-

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