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Article: InGaN light-emitting diode stripes with reduced luminous exitance

TitleInGaN light-emitting diode stripes with reduced luminous exitance
Authors
Issue Date2015
Citation
Optics Express, 2015, v. 23, p. 15021-15028 How to Cite?
AbstractInGaN light-emitting diodes of stripe geometries have been demonstrated. The elongated geometry facilitates light spreading in the longitudinal direction. The chips are further shaped by laser-micromachining to have partially-inclined sidewalls. The light extraction efficiencies of such 3D chip geometries are enhanced by ~12% (~8% according to ray-trace simulations), leading to a reduction of junction temperatures. The effective emission area is also increased four times compared to a cubic chip. The stripe LEDs are thus more efficient emitters with reduced luminous exitance, making them more suitable for a wide range of lighting applications.
Persistent Identifierhttp://hdl.handle.net/10722/210732

 

DC FieldValueLanguage
dc.contributor.authorCheung, WS-
dc.contributor.authorCheung, YF-
dc.contributor.authorChen, H-
dc.contributor.authorHui, SYR-
dc.contributor.authorWaffenschmidt, E.-
dc.contributor.authorChoi, HW-
dc.date.accessioned2015-06-23T05:48:49Z-
dc.date.available2015-06-23T05:48:49Z-
dc.date.issued2015-
dc.identifier.citationOptics Express, 2015, v. 23, p. 15021-15028-
dc.identifier.urihttp://hdl.handle.net/10722/210732-
dc.description.abstractInGaN light-emitting diodes of stripe geometries have been demonstrated. The elongated geometry facilitates light spreading in the longitudinal direction. The chips are further shaped by laser-micromachining to have partially-inclined sidewalls. The light extraction efficiencies of such 3D chip geometries are enhanced by ~12% (~8% according to ray-trace simulations), leading to a reduction of junction temperatures. The effective emission area is also increased four times compared to a cubic chip. The stripe LEDs are thus more efficient emitters with reduced luminous exitance, making them more suitable for a wide range of lighting applications.-
dc.languageeng-
dc.relation.ispartofOptics Express-
dc.titleInGaN light-emitting diode stripes with reduced luminous exitance-
dc.typeArticle-
dc.identifier.emailCheung, YF: yukfaira@hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailHui, SYR: ronhui@eee.hku.hk-
dc.identifier.emailChen, H: htchen@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityHui, SYR=rp01510-
dc.identifier.doi10.1364/OE.23.015021-
dc.identifier.hkuros244152-
dc.identifier.hkuros263399-
dc.identifier.volume23-
dc.identifier.spage15021-
dc.identifier.epage15028-

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