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Article: Impact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La0.9Hf0.1MnO3

TitleImpact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La0.9Hf0.1MnO3
Authors
Issue Date2013
PublisherTrans Tech Publications. The Journal's web site is located at http://www.scitec.ch/1022-6680/
Citation
Advanced Materials Research, 2013, v. 634-638, p. 2485 - 2488 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/207740

 

DC FieldValueLanguage
dc.contributor.authorWang, Len_US
dc.contributor.authorWU, Zen_US
dc.contributor.authorJIANG, Yen_US
dc.contributor.authorRen, Ben_US
dc.contributor.authorHuang, Jen_US
dc.contributor.authorWang, Len_US
dc.contributor.authorXia, Yen_US
dc.contributor.authorGao, Jen_US
dc.date.accessioned2015-01-19T09:39:29Z-
dc.date.available2015-01-19T09:39:29Z-
dc.date.issued2013en_US
dc.identifier.citationAdvanced Materials Research, 2013, v. 634-638, p. 2485 - 2488en_US
dc.identifier.urihttp://hdl.handle.net/10722/207740-
dc.languageengen_US
dc.publisherTrans Tech Publications. The Journal's web site is located at http://www.scitec.ch/1022-6680/en_US
dc.relation.ispartofAdvanced Materials Researchen_US
dc.titleImpact of the Oxygen Content on the Electronic Properties in Epitaxial Thin Films of Electron-Doped La0.9Hf0.1MnO3en_US
dc.typeArticleen_US
dc.identifier.emailWang, L: wanglin1@hku.hken_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.identifier.doi10.4028/www.scientific.net/AMR.634-638.2485en_US
dc.identifier.hkuros242148en_US
dc.identifier.volume634-638en_US
dc.identifier.spage2485en_US
dc.identifier.epage2488en_US
dc.publisher.placeSwitzerlanden_US

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