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Article: Nonlinear Valley and Spin Currents from Fermi Pocket Anisotropy in 2D Crystals

TitleNonlinear Valley and Spin Currents from Fermi Pocket Anisotropy in 2D Crystals
Authors
Issue Date2014
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2014, v. 113 n. 15, article no. 156603, p. 156603:1-5 How to Cite?
AbstractThe controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here, we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy of Fermi pockets in crystalline solids. We find spin and valley currents to the second order in the electric field as well as their thermoelectric counterparts, i.e., the nonlinear spin and valley Seebeck effects. These second-order nonlinear responses allow two unprecedented possibilities to generate pure spin and valley flows without net charge current: (i) by an ac bias or (ii) by an arbitrary inhomogeneous temperature distribution. As examples, we predict appreciable nonlinear spin and valley currents in two-dimensional (2D) crystals including graphene, monolayer and trilayer transition-metal dichalcogenides, and monolayer gallium selenide. Our finding points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications based on 2D quantum materials.
Persistent Identifierhttp://hdl.handle.net/10722/206802
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731

 

DC FieldValueLanguage
dc.contributor.authorYu, H-
dc.contributor.authorWu, Y-
dc.contributor.authorLiu, GB-
dc.contributor.authorXu, XD-
dc.contributor.authorYao, W-
dc.date.accessioned2014-12-02T09:36:52Z-
dc.date.available2014-12-02T09:36:52Z-
dc.date.issued2014-
dc.identifier.citationPhysical Review Letters, 2014, v. 113 n. 15, article no. 156603, p. 156603:1-5-
dc.identifier.issn0031-9007-
dc.identifier.urihttp://hdl.handle.net/10722/206802-
dc.description.abstractThe controlled flow of spin and valley pseudospin is key to future electronics exploiting these internal degrees of freedom of carriers. Here, we discover a universal possibility for generating spin and valley currents by electric bias or temperature gradient only, which arises from the anisotropy of Fermi pockets in crystalline solids. We find spin and valley currents to the second order in the electric field as well as their thermoelectric counterparts, i.e., the nonlinear spin and valley Seebeck effects. These second-order nonlinear responses allow two unprecedented possibilities to generate pure spin and valley flows without net charge current: (i) by an ac bias or (ii) by an arbitrary inhomogeneous temperature distribution. As examples, we predict appreciable nonlinear spin and valley currents in two-dimensional (2D) crystals including graphene, monolayer and trilayer transition-metal dichalcogenides, and monolayer gallium selenide. Our finding points to a new route towards electrical and thermal generations of spin and valley currents for spintronic and valleytronic applications based on 2D quantum materials.-
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org-
dc.relation.ispartofPhysical Review Letters-
dc.rightsPhysical Review Letters. Copyright © American Physical Society.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleNonlinear Valley and Spin Currents from Fermi Pocket Anisotropy in 2D Crystals-
dc.typeArticle-
dc.identifier.emailYu, H: yuhongyi@hku.hk-
dc.identifier.emailLiu, GB: gbliu@hku.hk-
dc.identifier.emailYao, W: wangyao@hku.hk-
dc.identifier.authorityYao, W=rp00827en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.113.156603-
dc.identifier.scopuseid_2-s2.0-84907855051-
dc.identifier.hkuros241545-
dc.identifier.volume113-
dc.identifier.issue15-
dc.identifier.spage156603:1-
dc.identifier.epage156603:5-
dc.publisher.placeUnited States-

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