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Conference Paper: Spreading-Resistance Temperature Sensor on SOI

TitleSpreading-Resistance Temperature Sensor on SOI
Authors
Issue Date1998
PublisherIEEE.
Citation
IEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 148-151 How to Cite?
AbstractA Spreading-Resistance Temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) wafer and achieves characteristics comparable with similar SRT sensor on silicon wafer. This sensor structure can be potentially used in integrated sensors operating at temperatures up to 350 °C.
Persistent Identifierhttp://hdl.handle.net/10722/204166
ISBN

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorLi, Ben_US
dc.contributor.authorChan, CLen_US
dc.date.accessioned2014-09-19T20:07:44Z-
dc.date.available2014-09-19T20:07:44Z-
dc.date.issued1998en_US
dc.identifier.citationIEEE Hong Kong Electron Devices Meeting Proceedings, Hong Kong, China, 29 August 1998, p. 148-151en_US
dc.identifier.isbn0780349326-
dc.identifier.urihttp://hdl.handle.net/10722/204166-
dc.description.abstractA Spreading-Resistance Temperature (SRT) sensor is fabricated on silicon-on-insulator (SOI) wafer and achieves characteristics comparable with similar SRT sensor on silicon wafer. This sensor structure can be potentially used in integrated sensors operating at temperatures up to 350 °C.-
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofIEEE Hong Kong Electron Devices Meeting Proceedingsen_US
dc.rightsIEEE Hong Kong Electron Devices Meeting Proceedings. Copyright © IEEE.-
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleSpreading-Resistance Temperature Sensor on SOIen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/HKEDM.1998.740208-
dc.identifier.hkuros240646en_US
dc.identifier.spage148en_US
dc.identifier.epage151en_US
dc.publisher.placeUnited States-

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