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Conference Paper: Charge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress

TitleCharge trapping properties of N2O-treated NH3-nitrided oxides under high-field stress
Authors
Issue Date1995
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573
Citation
IEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 256-259 How to Cite?
AbstractA new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress
DescriptionConference Theme: Asia-Pacific Microelectronics 2000
Persistent Identifierhttp://hdl.handle.net/10722/204145
ISBN

 

DC FieldValueLanguage
dc.contributor.authorZeng, Xen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorNg, WTen_US
dc.date.accessioned2014-09-19T20:06:50Z-
dc.date.available2014-09-19T20:06:50Z-
dc.date.issued1995en_US
dc.identifier.citationIEEE Region 10th International Conference on Microelectronics and VLSI (TENCON '95), Hong Kong, China, 6-10 November 1995. In IEEE Region International Conference on Microelectronics and VLSI Proceedings, 1995, p. 256-259en_US
dc.identifier.isbn9780780326248-
dc.identifier.urihttp://hdl.handle.net/10722/204145-
dc.descriptionConference Theme: Asia-Pacific Microelectronics 2000-
dc.description.abstractA new technique, namely N2O treatment of NH3-nitrided oxides (NON20), is proposed to fabricate thin oxide. It is shown that the N2O treatment is superior to conventional reoxidation step in improving charge trapping property and interface hardness of oxides under high-field stress-
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=3573-
dc.relation.ispartofIEEE Region International Conference on Microelectronics and VLSI Proceedingsen_US
dc.rightsIEEE Region International Conference on Microelectronics and VLSI Proceedings. Copyright © I E E E.-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.titleCharge trapping properties of N2O-treated NH3-nitrided oxides under high-field stressen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TENCON.1995.496387-
dc.identifier.scopuseid_2-s2.0-0029542585-
dc.identifier.hkuros240614en_US
dc.identifier.hkuros12532-
dc.identifier.spage256en_US
dc.identifier.epage259en_US
dc.publisher.placeUnited States-

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